Semiconductor device
An uppermost one of multilayered electrode pads, on which a bump and a plating coat will be formed, is made of metal having high ionization tendency, particularly, Al. On the other hand, an uppermost one of multilayered electrode pads, on which none of the bump and the plating coat will be formed, is made of metal having low ionization tendency, particularly, Cu.
1 . A semiconductor device comprising:
a substrate comprising a semiconductor chip and a scribe grid; and
a plurality of multilayered electrode pads provided on the semiconductor chip and the scribe grid, respectively, wherein
the uppermost one of the multilayered electrode pads, on which a bump is formed, is made of metal having ionization tendency higher than that of material for the bump, and
the uppermost one of the multilayered electrode pads, on which the bump is not formed, is made of metal having ionization tendency lower than that of the material for the bump.
2 . The semiconductor device according to claim 1 , wherein
the bump is formed on the electrode pad provided on the semiconductor chip, and the bump is not formed on the electrode pad provided on the scribe grid.
3 . The semiconductor device according to claim 1 , wherein
the bump is formed on the electrode pad provided on the semiconductor chip, and the electrode pad provided on the scribe grid is exposed.
4 . The semiconductor device according to claim 1 , wherein
the metal of the uppermost one of the multilayered electrode pads, on which the bump is formed, is Al, and the metal of the uppermost one of the multilayered electrode pads, on which the bump is not formed, is Cu.
5 . The semiconductor device according to claim 3 , wherein
the metal of the uppermost one of the multilayered electrode pads, on which the bump is formed, is Al, and the metal of the uppermost one of the multilayered electrode pads, on which the bump is not formed, is Cu.
6 . The semiconductor device according to claim 2 , wherein
the metal of the uppermost one of the multilayered electrode pads provided on the semiconductor chip is Al, and the metal of the uppermost one of the multilayered electrode pads provided on the scribe grid is Cu.
7 . A semiconductor chip comprising:
a substrate having a plurality of multilayered electrode pads thereon, wherein
the uppermost one of the multilayered electrode pads, on which a bump is formed, is made of metal having ionization tendency higher than that of material for the bump, and
the uppermost one of the multilayered electrode pads, on which the bump is not formed, is made of metal having ionization tendency lower than that of the material for the bump.
8 . The semiconductor chip according to claim 7 , wherein
the metal of the uppermost one of the multilayered electrode pads, on which the bump is formed, is Al, and the metal of the uppermost one of the multilayered electrode pads, on which the bump is not formed, is Cu.