Electronic circuit, electro-optical device, and electronic apparatus including the same
View Patent ↗An electronic circuit, which has transistors disposed on a substrate, each transistor including an active layer made of thin-film polysilicon, includes a sensor that converts a measured quantity into a current value, a current-voltage conversion circuit that converts the current value into a voltage, and a voltage detection circuit that detects the voltage converted by the current-voltage conversion circuit and outputs a predetermined signal. The current-voltage conversion circuit includes a storage circuit and a range-switching circuit that switches a current-voltage conversion range of the current-voltage conversion circuit by switching the capacitance of the storage circuit.
1. An electronic circuit having transistors disposed on a substrate, each transistor including an active layer made of thin-film polysilicon, the electronic circuit comprising:
a sensor that converts a measured quantity into a current value;
a current-voltage conversion circuit that converts the current value into a voltage; and
a voltage detection circuit that detects the voltage converted by the current-voltage conversion circuit and outputs a predetermined signal,
wherein the current-voltage conversion circuit includes a storage circuit and a range-switching circuit that switches a current-voltage conversion range of the current-voltage conversion circuit by switching the capacitance of the storage circuit between a first capacitance value and a second capacitance value,
wherein the storage circuit includes a first capacitive element and a second capacitive element connected to the sensor, and the range-switching circuit electrically connects either one or both of the first capacitive element and the second capacitive element to the sensor in response to a range-switching signal,
wherein the storage circuit includes a capacitive transistor having an active layer made of thin-film polysilicon, the range-switching signal is connected to a source electrode and a drain electrode of the capacitive transistor, and an end of the sensor is connected to a gate electrode of the capacitive transistor.
2. The electronic circuit according to claim 1 , wherein the storage circuit further includes a first switching element for writing a reset voltage into the first capacitive element and the second capacitive element at an appropriate timing, and the first switching element is connected to a reset voltage switching circuit that switches the reset voltage in response to the range-switching signal.
3. The electronic circuit according to claim 1 , wherein the sensor is a PIN junction diode or a PN junction diode including an active layer made of thin-film polysilicon, the active layer being the same layer as the active layer of the capacitive transistor, and the measured quantity corresponds to a light illuminance.
4. The electronic circuit according to claim 1 , wherein the sensor is a resistor including the thin-film polysilicon which is the same as that for the active layer of the capacitive transistor, and the measured quantity corresponds to a temperature.
5. The electronic circuit according to claim 1 , wherein the voltage detection circuit includes a plurality of comparator circuits having the same circuit configuration, and different reference voltages are applied to the comparator circuits.
6. The electronic circuit according to claim 1 , wherein the voltage detection circuit includes a plurality of CMOS inverters or CMOS clocked inverters, and the CMOS inverters or the CMOS clocked inverters have different ratios of the channel width of an N-channel transistor to the channel width of a P-channel transistor.
7. An electro-optical device comprising the electronic circuit according to claim 1 .
8. An electronic apparatus comprising:
the electro-optical device according to claim 7 ; and
a display information processing circuit that processes display information to be displayed on the electro-optical device.