Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device
View Patent ↗A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.
1. A nitride semiconductor light-emitting device comprising:
a coating film on a light-emitting portion, said light-emitting portion being a side surface of said nitride semiconductor light-emitting device, and
a reflectance control film on the coating film,
said coating film essentially consisting of an aluminum oxynitride film and being in contact with said light-emitting portion,
said reflectance control film being formed of a stack of an aluminum oxide film and a silicon oxide film, the reflectance control film being in contact with said coating film.
2. The nitride semiconductor light-emitting device according to claim 1 , wherein an oxygen content in said coating film is in a range from at least 0 atomic % to at most 35 atomic %.
3. The nitride semiconductor light-emitting device according to claim 1 , wherein said light-emitting portion with the coating film and the reflectance control film has a reflectance of at least 18% with respect to light emitted from the nitride semiconductor light-emitting device.
4. The nitride semiconductor light-emitting device according to claim 1 , wherein an aluminum oxide film and a stack of a silicon oxide film and a tantalum oxide film are successively formed on a light-reflection side.
5. The nitride semiconductor light-emitting device according to claim 1 , wherein an aluminum oxide film and a stack of a silicon nitride film and a silicon oxide film are successively formed on a light-reflection side.
6. A nitride semiconductor light-emitting device comprising:
a coating film on a light-emitting portion, said light-emitting portion being a side surface of said nitride semiconductor light-emitting device, and
a reflectance control film on the coating film,
said coating film essentially consisting of an aluminum oxynitride film and being in contact with said light-emitting portion,
said reflectance control film including two aluminum oxide layers with a third layer interposed in between the two aluminum oxide layers, the reflectance control film being in contact with said coating film.
7. The nitride semiconductor light-emitting device according to claim 6 wherein the third layer is formed of silicon oxide.