Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes
View Patent ↗A power semiconductor package that includes at least two semiconductor devices electrically coupled to one another through a common metallic web.
1. A power semiconductor package, comprising:
a metallic body having a web portion configured for electrical and mechanical coupling using a conductive adhesive to active electrodes of at least two semiconductor devices, and a connector portion extending from an edge of said web portion to connect electrically said active electrodes of said semiconductor devices to an external conductive body;
a first semiconductor die and a second semiconductor die electrically and mechanically coupled to said web portion;
a ceramic insulation body directly bonded to at one surface thereof to a surface of said metallic body; and
another metallic body directly bonded to another opposing surface of said ceramic insulation body.
2. The power semiconductor package of claim 1 , wherein said metallic body and said another metallic body are comprised of copper.
3. The power semiconductor package of claim 2 , wherein said ceramic insulation body is comprised of aluminum oxide.
4. The power semiconductor package of claim 1 , wherein said connector is horseshoe shaped.
5. The power semiconductor package of claim 1 , further comprising another connector extending from another edge of said web portion opposite said connector.
6. The power semiconductor package of claim 1 , wherein said first semiconductor device is an IGBT.
7. The power semiconductor package of claim 1 , wherein said second semiconductor device is a diode.
8. The power semiconductor package of claim 1 , wherein said web portion is configured for electrical and mechanical connection using a conductive adhesive to an active electrode of another semiconductor device.
9. The power semiconductor package of claim 8 , wherein said first semiconductor device is an IGBT and said second semiconductor device is a diode.
10. The power semiconductor package of claim 1 , wherein said another metallic body is configured for electrical and mechanical connection using a conductive adhesive to an active electrode of another semiconductor device.
11. The power semiconductor package of claim 10 , wherein said first semiconductor device is an IGBT and said second semiconductor device is a diode.
12. The power semiconductor package of claim 1 , wherein said active electrode is an emitter electrode of an IGBT.
13. The power semiconductor package of claim 1 , wherein said active electrode is a collector electrode of an IGBT.
14. The power semiconductor package of claim 1 , wherein said active electrode is a gate electrode.