Structure with transistor
A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.
1. A flexible structure with a transistor comprising:
a plastic film substrate;
a gas barrier layer made of Al 2 O 3 of 10-52 nm thickness on the plastic film substrate; and
a transistor on the gas barrier layer,
wherein the transistor includes an oxide semiconductor layer directly formed on the gas barrier layer,
wherein a gate insulator, a source electrode and a drain electrode are formed on the oxide semiconductor layer,
wherein a gate electrode is formed on the gate insulator,
wherein an oxygen transmission rate of the plastic film substrate with the gas barrier layer is 0.9-3.5 cc/m 2 /24 hours/1 atm,
and
wherein a water-vapor transmission rate of the plastic film substrate with the gas barrier layer is 0.5-3g/m 2 /24 hours.
2. The flexible structure according to claim 1 ,
wherein the oxide semiconductor layer comprises In—Ga—Zn—O.
3. A display having the structure according to claim 1 .
4. The flexible structure according to claim 1 ,
wherein a material of the electrodes and a mother material of the oxide semiconductor layer are same.