Fabrication of metallic microstructures via exposure of photosensitive compostion
View Patent ↗A method of forming microstructures. An article including a metal atom precursor is disproportionally exposed to electromagnetic radiation in an amount and intensity sufficient to convert some of the precursor to elemental metal. Additional conductive material may then be deposited onto the elemental metal to produce a microstructure.
1. A method of fabrication of metallic structures, comprising:
providing a patterned article including a layer comprising at least one first portion that is conductive to a first extent and at least one second portion that is non-conductive or conductive to a second extent less than the first extent;
selectively depositing conductive material onto the first portion of the patterned article in an amount greater than the second portion, or selectively depositing conductive material on the second portion of the patterned article in an amount greater than the first portion, thereby forming a flexible metal structure on the patterned article;
deforming the patterned article comprising the flexible metal structure from a first configuration to a second configuration; and
depositing auxiliary metal on the metal structure to the extent that the structure is self-supporting in the second configuration.
2. The method of claim 1 , wherein the article comprises a photographic film.
3. The method of claim 1 , further comprising freeing the flexible metal structure from the article.
4. The method of claim 1 , wherein the at least one first portion that is conductive to a first extent is embedded in the layer.
5. The method of claim 1 , wherein a planar dimension of a portion of the flexible metal structure is less than about 50 μm in width.
6. The method of claim 1 , wherein a planar dimension of a portion of the flexible metal structure is about 30 μm in width.
7. The method of claim 1 , wherein the article is flexible.
8. The method of claim 1 , wherein the deforming step comprises bending the article.
9. The method of claim 1 , wherein the flexible metal structure is a discontinuous structure.
10. The method of claim 1 , wherein a planar dimension of a portion of the flexible metal structure is less than about 100 μm in width.
11. The method of claim 1 , wherein the first portion or the second portion comprises a metal.
12. The method of claim 1 , wherein the conductive material is selectively deposited via electroless deposition.
13. The method of claim 1 , wherein the layer comprises a metal atom precursor capable of conversion into elemental metal.
14. The method of claim 1 , comprising forming a structure having an aspect ratio of greater than or equal to about 5.
15. The method of claim 1 , wherein the selectively depositing step occurs in a single step.
16. The method of claim 1 , wherein the article is a part of microfluidic device comprising channels.
17. The method of claim 1 , wherein the conductive material is deposited onto the first portion of the patterned article.
18. The method of claim 1 , wherein the conductive material is deposited onto the first portion of the patterned article while essentially no conductive material is deposited onto the second portion of the patterned article.
19. The method of claim 1 , wherein the conductive material is deposited onto the second portion of the patterned article while essentially no conductive material is deposited onto the first portion of the patterned article.
20. The method of claim 1 , further comprising, after the selectively depositing step, removing the first or second portions of the layer where the conductive material was not deposited or deposited to a lesser extent.