Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device includes a silicon substrate, and a NiSi layer provided on the silicon substrate aiming to suppress oxidation of the surface of a NiSi layer and the resistivity increase. The NiSi layer includes a bottom NiSi region and a top NiSi region. The bottom NiSi region provided in contact with silicon surface, and containing substantially no nitrogen. The top NiSi region is a nitrided NiSi region provided in contact with the bottom NiSi region, and containing nitrogen. The NiSi layer has a total thickness of 50 nm or below.
1. A method of manufacturing a semiconductor device comprising forming a NiSi layer on a silicon substrate,
wherein said forming a NiSi layer comprises:
a first step forming a Ni film on the silicon of said substrate;
a second step forming a metal nitride film on said Ni film, the second step includes forming a first layer adjacent to said Ni film and forming a second layer adjacent to said first layer, said first layer has a first nitrogen concentration greater than a second nitrogen concentration said second layer;
a third step annealing said silicon substrate having said metal nitride film provided thereon at a first temperature not lower than 200° C. and not higher than 350° C., so as to react nickel in said Ni film and silicon in said silicon substrate, to thereby form a Ni 2 Si layer on said silicon of said substrate, and to thereby introduce nitrogen into said Ni 2 Si layer in the region thereof ranging from the surface to a predetermined depth;
a fourth step, after said third step, selectively removing an unreacted portion of said Ni film; and
a fifth step, after said fourth step, annealing said silicon substrate at a second temperature different from said first temperature, so as to form, said NiSi layer which comprises a first region containing substantially no nitrogen, and a second region in contact with the upper portion of said first region, and being nitrided,
wherein, in said first step, said Ni film formed on said silicon substrate has a thickness of 10 nm or below.
2. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein said forming said NiSi layer is a step of forming said NiSi layer having a total thickness of 50 nm or below.
3. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein said forming said NiSi layer is a step of forming said NiSi layer having a total thickness of 5 nm or more,
and, in said fifth step, the second region having a thickness of not less than 1 nm and not more than 2 nm, is formed.
4. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein said third step is a step of annealing said silicon substrate at said first temperature for 1 second to 300 seconds, both ends inclusive.
5. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein, in said second step, a high-nitrogen-concentration region having a nitrogen concentration of 80 at % or more, and a low-nitrogen-concentration region having a nitrogen concentration of 60 at % or less are formed as said metal nitride film, on said Ni film, in this order as viewed from the bottom.
6. The method of manufacturing a semiconductor device as claimed in claim 5 , wherein, in said second step, the high-nitrogen-concentration region having a thickness of 0.05 nm to 3 nm, both ends inclusive, is formed in contact with the upper portion of said Ni film.
7. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein said metal nitride film includes varied concentrations of nitrogen.
8. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein said first layer has a thickness less than a thickness of said second layer.
9. The method of manufacturing a semiconductor device as claimed in claim 1 , wherein said forming a Ni 2 Si layer on said silicon of said substrate and said introducing nitrogen into said Ni 2 Si layer are performed simultaneously.
10. A method of manufacturing a semiconductor device comprising forming a NiSi layer on a silicon substrate,
wherein said forming a NiSi layer comprises:
a first step forming a Ni film on the silicon of said substrate;
a second step forming a metal nitride film on said Ni film;
a third step annealing said silicon substrate having said metal nitride film provided thereon at a first temperature not lower than 200° C. and not higher than 350° C., so as to react nickel in said Ni film and silicon in said silicon substrate, to thereby form a Ni 2 Si layer on said silicon of said substrate, and to thereby introduce nitrogen into said Ni 2 Si layer in the region thereof ranging from the surface to a predetermined depth;
a fourth step, after said third step, selectively removing an unreacted portion of said Ni film; and
a fifth step, after said fourth step, annealing said silicon substrate at a second temperature different from said first temperature, so as to form, said NiSi layer which comprises a first region containing substantially no nitrogen, and a second region in contact with the upper portion of said first region, and being nitrided,
wherein, in said first step, said Ni film formed on said silicon substrate has a thickness of 10 nm or below, and said forming a Ni 2 Si layer on said silicon of said substrate includes supplying nickel from said Ni film to said silicon at a rate slower than a rate of reaction between said nickel and said silicon.