Method of forming organic electronic devices
View Patent ↗Disclosed are methods of fabricating an organic electronic device, which includes dip coating layers, and the devices made therefrom.
1. A method of depositing a buffer layer and a light emitting layer for an organic electronic device, comprising:
cleaning a workpiece until a water contact angle of a surface of the workpiece is less than 10 degrees;
dip-coating the cleaned workpiece into a liquid medium comprising a buffer layer material, wherein the viscosity of the liquid medium is from about 1 cP to about 20 cP;
drying the workpiece and;
dip-coating the buffer-coated workpiece into a liquid medium comprising a light emitting layer material, wherein the viscosity of the liquid medium is from about 1 cP to about 20 cP,
wherein the buffer layer and light emitting layer each have a thickness in the range of from about 10 nm to about 300 nm.
2. The method of claim 1 , wherein the dip-coating of the workpiece into each liquid medium comprises selecting a withdrawal rate to provide the buffer layer and light emitting layer in a range of about 10 nm to about 300 nm in thickness.
3. The method of claim 2 , wherein the withdrawal rate is about 0.2 mm/min to about 400 mm/min, or about 1 mm/min to about 25 mm/min.
4. The method of claim 1 , wherein the workpiece is cleaned until a water contact angle is less than or equal to about 8 degrees, or wherein the substrate is cleaned until a water contact angle is less than or equal to about 5 degrees.
5. The method of claim 1 , further comprising: treating a portion of the workpiece to make it non-wettable wherein the buffer layer and light emitting layer material does not deposit on the non-wettable portion, thereby creating a pattern.
6. The method of claim 5 , wherein the treating is with fluorine containing plasma.
7. The method of claim 5 , wherein the dip-coating of the workpiece into each liquid medium comprises selecting a withdrawal rate to provide the buffer layer and light emitting layer in a range of about 10 nm to about 300 nm in thickness.
8. The method of claim 7 , wherein the withdrawal rate is about 0.2 mm/min to about 400 mm/min, or about 1 mm/min to about 25 mm/min.