IP Library Granted Patent US 7,968,216
Granted Patent B2
US 7,968,216 · App. 11/794,910 · Granted Jun 28, 2011

Internal gear pump

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Quick Facts
Patent No.
US 7,968,216
App. No.
11/794,910
Granted
Jun 28, 2011
Kind
B2
Abstract

There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an Al x Ga y In z N layer (wherein 0≦x≦1, 0≦y≦1, and 0≦z≦1) and an oxide material layer composed of a metal oxide and formed on the Al x Ga y In z N layer. The metal oxide may be TiO 2 . The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

Claims (11)

1. A functional device, comprising:

an Al x Ga y In z N layer (wherein 0≦x≦1, 0 ≦y≦1, and 0≦z≦1); and

a thin film electrode of a metal oxide formed on the Al x Ga y In z N layer,

wherein the metal oxide is Ti 1-p Nb p O 2 (wherein 0.01≦p≦0.2) and has a transmittance of at least 80% for wavelength in a range of 400 to 800 nm and a resistivity in an order of 10 −4 Ω.cm at room temperature.

2. The functional device according to claim 1 , wherein the metal oxide comprises Anatase.

3. The functional device according to claim 1 , wherein the oxide material layer comprises a single-phase film.

4. The functional device according to claim 1 , wherein the oxide material layer comprises an epitaxial film.

5. The functional device according to claim 1 , wherein the functional device comprises a light-emitting element.

6. The functional device according to claim 1 , wherein the functional device comprises a high-frequency device.

7. The functional device according to claim 1 , wherein 0.01≦p≦0.06.

8. The functional device according to claim 1 , wherein said Al x Ga y In z N layer is a GaN layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 18, 2017
From: KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY
To: KANAGAWA INSTITUTE OF INDUSTRIAL SCIENCE AND TECHNOLOGY
Reel/Frame 043331/0301 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2008
From: HITOSUGI, TARO; FURUBAYASHI, YUTAKA; HASEGAWA, TETSUYA; HIROSE, YASUSHI; KASAI, JUNPEI; MORIYAMA, MIKI
To: TOYODA GOSEI CO., LTD.; KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY
Reel/Frame 020538/0314 →