Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
View Patent ↗A spin tunneling element includes a pinned layer, a barrier layer, and a free layer. The free layer includes a ferromagnetic layer including a ferromagnetic material that adjoins the barrier layer at a first interface. The free layer also includes a layer of amorphous material that adjoins the ferromagnetic layer at a second interface opposite the first interface. A first crystallization temperature of the ferromagnetic material at the first interface is lower than a second crystallization temperature at the second interface.
1. A spin tunneling element, comprising:
a pinned layer;
a barrier layer;
a free layer, comprising:
a ferromagnetic layer comprising a ferromagnetic material adjoining the barrier layer at a first interface, the ferromagnetic layer being a first ferromagnetic layer comprising the first ferromagnetic material;
a layer of amorphous material adjoining the ferromagnetic layer at a second interface opposite the first interface, wherein a first crystallization temperature of the ferromagnetic material at the first interface is lower than a second crystallization temperature at the second interface; and
a second ferromagnetic layer distinct from the layer of amorphous material and comprising a second ferromagnetic material magnetically softer than the first ferromagnetic material, the layer of amorphous material residing between the first ferromagnetic layer and the second ferromagnet layer.
2. The spin tunneling element of claim 1 , wherein the amorphous material comprises a material selected from the group consisting of: Ru, Ta, Cr, and Pt.
3. The spin tunneling element of claim 1 , wherein the layer of amorphous material has a thickness of greater than zero and less than 6 Angstroms.
4. The spin tunneling element of claim 1 , wherein:
the ferromagnetic layer is a first ferromagnetic layer comprising a first ferromagnetic material;
the layer of amorphous material comprises a second ferromagnetic material magnetically softer than the first ferromagnetic material.
5. The spin tunneling element of claim 4 , wherein the second ferromagnetic material is a metal alloy.
6. The spin tunneling element of claim 5 , wherein the second ferromagnetic material includes NiFeX, wherein X includes at least one of B and another nonmagnetic material.
7. The spin tunneling element of claim 1 , wherein the barrier layer includes MgO.
8. The spin tunneling element of claim 7 , wherein the barrier layer includes MgOX, wherein X is a nonmagnetic material.
9. The spin tunneling element of claim 7 , wherein the barrier layer has a BCC crystal structure with a [100] texture.
10. The spin tunneling element of claim 7 , wherein the ferromagnetic material includes CoFe.
11. The spin tunneling element of claim 10 , wherein the ferromagnetic material includes CoFeX, wherein X includes is a nonmagnetic material.
12. The spin tunneling element of claim 11 , wherein X is B.
13. A spin tunneling element, comprising:
a pinned layer;
a barrier layer;
a free layer, comprising:
a ferromagnetic layer comprising a ferromagnetic material adjoining the barrier layer at a first interface; and
a layer of amorphous material adjoining the ferromagnetic layer at a second interface opposite the first interface, wherein a first crystallization temperature of the ferromagnetic material at the first interface is lower than a second crystallization temperature at the second interface, wherein the ferromagnetic layer is a first ferromagnetic layer; and
the free layer further comprises a second ferromagnetic layer distinct from the layer of amorphous material, the layer of amorphous material being nonmagnetic and residing between the first ferromagnetic layer and the second ferromagnet layer.