MEMS structure having a stress inverter temperature-compensated resonating member
View Patent ↗A MEMS structure having a temperature-compensated resonating member is described. The MEMS structure comprises a stress inverter member coupled with a substrate. A resonating member is housed in the stress inverter member and is suspended above the substrate. The MEMS stress inverter member is used to alter the thermal coefficient of frequency of the resonating member by inducing a stress on the resonating member in response to a change in temperature.
1. A MEMS structure, comprising:
a stress inverter member coupled with a substrate; and
a resonating member housed in said stress inverter member and suspended above said substrate.
2. The MEMS structure of claim 1 wherein the TCE of said stress inverter member is greater than the TCE of said substrate.
3. The MEMS structure of claim 2 wherein said stress inverter member is comprised substantially of silicon-germanium and said substrate is comprised substantially of silicon.
4. The MEMS structure of claim 1 wherein the thermal coefficient of frequency of said resonating member is negative and wherein said stress inverter member is for inducing a tensile stress on said resonating member in response to an increase in temperature.
5. The MEMS structure of claim 4 wherein said stress inverter member and said resonating member are comprised substantially of silicon-germanium, and wherein said substrate is comprised substantially of silicon.
6. The MEMS structure of claim 1 wherein the shape of said stress inverter member is selected from the group consisting of a ring and a square frame.
7. The MEMS structure of claim 6 wherein said stress inverter member is coupled with said substrate by a pair of anchor points.
8. The MEMS structure of claim 7 wherein the axis formed by said pair of anchor points is orthogonal to the longest dimension of said resonating member.
9. The MEMS structure of claim 7 wherein the axis formed by said pair of anchor points has an angle θ relative to the longest dimension of said resonating member, where 0°<θ<90°.
10. The MEMS structure of claim 1 , further comprising:
a pair of electrodes coupled with said substrate on either side of said resonating member.
11. The MEMS structure of claim 10 wherein said pair of electrodes is comprised of substantially the same material as said resonating member.
12. The MEMS structure of claim 1 wherein the thermal coefficient of frequency of said resonating member is positive and wherein said stress inverter member is for inducing a compressive stress on said resonating member in response to an increase in temperature.
13. A MEMS structure, comprising:
a stress inverter member suspended above a substrate;
a pair of decoupling members connected to either side of said stress inverter member and coupled with said substrate; and
a resonating member housed in said stress inverter member and suspended above said substrate.
14. The MEMS structure of claim 13 wherein the thermal coefficient of frequency of said resonating member is negative and wherein said stress inverter member is for inducing a tensile stress on said resonating member in response to an increase in temperature.
15. The MEMS structure of claim 14 wherein said pair of decoupling members is provided for reducing the magnitude of said tensile stress induced on said resonating member.
16. The MEMS structure of claim 15 wherein said pair of decoupling members is a pair of rings, and wherein the extent of reducing the magnitude of said tensile stress induced on said resonating member is determined by a parameter selected from the group consisting of the radius of each of said pair of rings and the width of each of said pair of rings.
17. The MEMS structure of claim 15 wherein said pair of decoupling members is a pair of beams, and wherein the extent of reducing the magnitude of said tensile stress induced on said resonating member is determined by the length of each of said pair of beams.
18. The MEMS structure of claim 13 wherein the TCE of said stress inverter member and said pair of decoupling members is greater than the TCE of said substrate.
19. The MEMS structure of claim 18 wherein said stress inverter member and said pair of decoupling members are comprised substantially of silicon-germanium and said substrate is comprised substantially of silicon.
20. The MEMS structure of claim 13 wherein said pair of decoupling members is coupled with said substrate by a pair of anchor points.
21. The MEMS structure of claim 20 wherein the axis formed by said pair of anchor points is orthogonal to the longest dimension of said resonating member.
22. The MEMS structure of claim 20 wherein the axis formed by said pair of anchor points has an angle θ relative to the longest dimension of said resonating member, where 0°<θ<90°.
23. A method for altering the thermal coefficient of frequency of a MEMS structure, comprising:
providing a resonating member housed in a stress inverter member, wherein said stress inverter member is coupled with a substrate and said resonating member is suspended above said substrate; and
inducing a stress on said resonating member with said stress inverter member in response to a change in temperature.
24. The method of claim 23 wherein inducing said stress reduces the magnitude of the thermal coefficient of frequency of said resonating member.
25. The method of claim 24 wherein inducing said stress on said resonating member comprises inducing a tensile stress on said resonating member in response to an increase in temperature.
26. The method of claim 24 wherein inducing said stress on said resonating member comprises inducing a compressive stress on said resonating member in response to an increase in temperature.
27. The method of claim 23 wherein said stress inverter member is coupled with said substrate via a pair of decoupling members.
28. The method of claim 27 wherein said pair of decoupling members is provided to reduce the magnitude of said stress induced on said resonating member.
29. The method of claim 23 wherein said resonating member and said stress inverter member are comprised substantially of silicon-germanium and said substrate is comprised substantially of silicon.
30. A MEMS structure, comprising:
an array of stress inverter members suspended above a substrate, wherein each stress inverter member houses a resonating member and is connected to a pair of decoupling members coupled with said substrate.
31. The MEMS structure of claim 30 wherein said array comprises n rows and m columns of stress inverter members suspended above said substrate.
32. The MEMS structure of claim 31 wherein the diameter of each stress inverter member is the same within each row of stress inverter members but increases for each successive row of stress inverter members.
33. The MEMS structure of claim 32 wherein each pair of decoupling members is a pair of rings, and wherein the radius of each pair of rings is the same within each column of stress inverter members but increases for each successive column of stress inverter members.
34. The MEMS structure of claim 32 wherein each pair of decoupling members is a pair of beams, and wherein the length of each pair of beams is the same within each column of stress inverter members but increases for each successive column of stress inverter members.
35. A MEMS structure, comprising:
a frame coupled with a substrate by a pair of anchor points, wherein the TCE of said frame is different from the TCE of said substrate;
a resonator member housed in said frame and suspended above said substrate, wherein said resonator member is, in one plane, completely surrounded by said frame; and
a pair of electrodes coupled with said substrate on either side of said resonator member.
36. The MEMS structure of claim 35 , wherein said frame consists essentially of silicon-germanium and said substrate consists essentially of silicon.
37. The MEMS structure of claim 35 , wherein the shape of said frame is selected from the group consisting of a ring and a square.
38. The MEMS structure of claim 35 , wherein the axis formed by said pair of anchor points is orthogonal to the longest dimension of said resonator member.
39. The MEMS structure of claim 35 , wherein the axis formed by said pair of anchor points has an angle θ relative to the longest dimension of said resonator member, where 0<θ<90°.
40. A method for altering the thermal coefficient of frequency of a MEMS structure, comprising:
providing a resonator member housed in a frame coupled with a substrate by a pair of anchor points, wherein said resonator member is suspended above said substrate, wherein the TCE of said frame is different from the TCE of said substrate, and wherein said resonator member is, in one plane, completely surrounded by said frame; and
applying a first stress to said frame, wherein, in response to applying said first stress, said frame applies a second, opposite, stress to said resonator member.
41. The method of claim 40 , wherein applying said second stress reduces the magnitude of the thermal coefficient of frequency of said resonator member.
42. The method of claim 41 , wherein said frame applies a tensile stress to said resonator member in response to an increase in temperature.
43. The method of claim 41 , wherein said frame applies a compressive stress to said resonator member in response to a decrease in temperature.
44. The method of claim 41 , wherein said frame applies a compressive stress to said resonator member in response to an increase in temperature.
45. The method of claim 41 , wherein said frame applies a tensile stress to said resonator member in response to a decrease in temperature.