Hillock-free aluminum layer and method of forming the same
View Patent ↗A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer could be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. Also, the pure Al layer is physically thicker than the barrier Al layer, for effectively inhibiting the occurrence of hillocks and the like.
1. An electronic device, at least comprising a conductive pattern formed on a substrate, wherein the conductive pattern comprises:
a substantially pure aluminum layer formed on the substrate; and
a barrier aluminum layer formed between the substantially pure aluminum layer and the substrate;
wherein the barrier aluminum layer contains at least one compound selected from the group consisting of aluminum oxide (AlOx) and aluminum oxide-nitride (AlOxNy); and
wherein the thickness ratio of the barrier aluminum layer to the substantially pure aluminum layer is in the range between 1: 6.25 and about 1:2.
2. The electronic device according to claim 1 , wherein the aluminum of the substantially pure aluminum layer is at least about 99.0 wt %.
3. The electronic device according to claim 1 , wherein the substantially pure aluminum layer has a thickness ranging between about 1000 angstrom and about 4500 angstrom.
4. An electronic device, at least comprising a conductive pattern formed on a substrate, wherein the conductive pattern comprises:
a substantially pure aluminum layer formed on the substrate; and
an aluminum-neodymium (Al—Nd) alloy layer formed between the substantially pure aluminum layer and the substrate;
wherein the Al—Nd alloy layer has a thickness ranging between about 100 angstrom and about 4000 angstrom.
5. The electronic device according to claim 4 , wherein the aluminum of the substantially pure aluminum layer is at least about 99.0 wt %.
6. The electronic device according to claim 4 , wherein the thickness ratio of the Al—Nd alloy layer to the substantially pure aluminum layer is in the range between about 1:6.67 and about 1:0.55.
7. The electronic device according to claim 4 , wherein the substantially pure aluminum layer has a thickness ranging between about 500 angstrom and about 4500 angstrom.
8. The electronic device according to claim 4 , wherein the Al—Nd alloy layer is in a thickness of about 300 angstrom and about 900 angstrom, and the substantially pure aluminum layer is in a thickness of about 1500 angstrom and about 3000 angstrom.
9. The electronic device according to claim 4 , wherein a protective layer is further formed on the substantially pure aluminum layer.
10. The electronic device according to claim 9 , wherein the protective layer is made of material comprising molybdenum (Mo), or molybdenum nitride (MoN), or titanium (Ti), or alloy containing Mo, or MoN or Ti.
11. A thin film transistor device formed on a substrate, comprising:
a source region and a drain region;
a channel region formed between the source region and the drain region;
a gate electrode formed adjacent to the channel region; and
an insulating layer formed between the gate electrode and the channel region;
wherein each of the gate electrode, the source region and the drain region comprises a metal layer, and at least one of the metal layers, which comprises a substantially pure aluminum layer, is closer to the substrate than the others,
wherein an aluminum-neodymium (Al—Nd) alloy layer is further formed between the substantially pure aluminum layer and the substrate, and the Al—Nd alloy layer has a thickness ranging between about 100 angstrom and about 4000 angstrom.
12. The thin film transistor device according to claim 11 , wherein the aluminum of the substantially pure aluminum layer is at least about 99.0 wt %.
13. The thin film transistor device according to claim 11 , wherein the thickness ratio of the Al—Nd alloy layer to the substantially pure aluminum layer is in the range between about 1:6.67 and about 1:0.55.
14. The thin film transistor device according to claim 11 , wherein the substantially pure aluminum layer has a thickness ranging between about 500 angstrom and about 4500 angstrom.
15. The thin film transistor device according to claim 11 , wherein the Al—Nd alloy layer is in a thickness of about 300 angstrom and about 900 angstrom, and the substantially pure aluminum layer is in a thickness of about 1500 angstrom and about 3000 angstrom.
16. The thin film transistor device according to claim 11 , wherein a protective layer is further formed on the substantially pure aluminum layer.
17. The thin film transistor device according to claim 16 , wherein the protective layer is made of material comprising molybdenum (Mo), or molybdenum nitride (MoN), or titanium (Ti), or alloy containing Mo, or MoN or Ti.
18. An electronic device, at least comprising a conductive pattern formed on
a substrate, wherein the conductive pattern comprises:
a substantially pure aluminum layer formed on the substrate; and
a barrier aluminum layer formed between the substantially pure aluminum layer and the substrate;
wherein the barrier aluminum layer contains at least one compound selected from the group consisting of aluminum oxide (AlOx) and aluminum oxide-nitride (AlOxNy); and
wherein the substantially pure aluminum layer has a thickness ranging between about 1000 angstrom and about 4500 angstrom.
19. An electronic device, at least comprising a conductive pattern formed on a substrate, wherein the conductive pattern comprises:
a substantially pure aluminum layer formed on the substrate; and
an aluminum oxide-nitride (AlOxNy) layer formed between the substantially pure aluminum layer and the substrate;
wherein a thickness ratio of the aluminum oxide-nitride layer to the substantially pure aluminum layer is in the range between about 1:6.25 and about 1:2.