Organic light emitting device and method of manufacturing the same

1. An organic light emitting device comprising:

a first electrode for providing holes;

a second electrode facing the first electrode and providing electrons;

an organic luminescent layer interposed between the first and second electrodes; and

an electron transfer layer disposed between the second electrode and the organic luminescent layer,

wherein the electron transfer layer is a single layer including electron transfer members so that the electron transfer layer injects and transports electrons to the organic luminescent layer while preventing holes from the first electrode from flowing into the electron transfer layer, and

wherein the electron transfer members include single-crystal silicon particles.

2. The organic light emitting device according to claim 1 , wherein each of the single-crystal silicon particles can have a diameter ranging from about 50 Å to about 100 Å.

3. The organic light emitting device according to claim 1 , wherein each of the single-crystal silicon particles is encompassed by an insulating layer.

4. The organic light emitting device according to claim 3 , wherein the insulating layer is one of silicon nitride, silicon oxide and an organic insulating layer.

5. The organic light emitting device according to claim 4 , wherein each single-crystal silicon particles encompassed within the insulating layer is disposed with a uniform thickness between the second electrode and the organic luminescent layer.

6. The organic light emitting device according to claim 1 , wherein the single-crystal silicon particles are in an insulating layer.

7. The organic light emitting device according to claim 6 , wherein the insulating layer is one of silicon nitride, silicon oxide and an organic insulating material.

8. The organic light emitting device according to claim 1 , wherein a thickness of the electron transfer layer, including the electron transfer members, measured between the organic luminescent layer and the second electrode is within a range of about 300 Å to about 600 Å.

9. A method of manufacturing an organic light emitting device, comprising:

forming a second electrode on a substrate;

forming a hole injection layer and a hole transport layer sequentially on the second electrode;

forming an organic luminescent layer on the hole transport layer;

forming an electron transfer layer, including a plurality of electron transfer members and an insulating layer, on the organic luminescent layer; and

forming a first electrode on the electron transfer layer,

wherein the forming the electron transfer layer includes,

mixing powder type single-crystal silicon particles with a volatile solution;

applying a resulting mixture on the organic luminescent layer; and

forming the insulating layer on the single-crystal silicon particles.

10. The method of manufacturing an organic light emitting device according to claim 9 wherein the forming the insulating layer includes depositing by one of spin coating and printing.

11. The method of manufacturing an organic light emitting device according to claim 9 , wherein the applying the resulting mixture includes inkjetting the resulting mixture onto the organic luminescent layer.

12. The method of manufacturing an organic light emitting device according to claim 9 , wherein the insulating layer is one of silicon nitride, silicon oxide and an organic insulating material.

13. A method of manufacturing an organic light emitting device, comprising:

forming a first electrode on a substrate;

forming an electron transfer layer, including a plurality of electron transfer members and an insulating layer, on the first electrode;

forming an organic luminescent layer on the electron transfer layer;

forming a hole transport layer a hole injection layer sequentially on the organic luminescent layer; and

forming a second electrode on the a hole injection layer,

wherein the forming the electron transfer layer includes,

mixing powder type single-crystal silicon particles with one of a solvent and a volatile solution;

applying a resulting mixture on the first electrode; and

forming the insulating layer on the single-crystal silicon particles.

14. The method of manufacturing an organic light emitting device according to claim 13 , wherein the forming the insulating layer includes depositing by one of spin coating and printing.

15. The method of manufacturing an organic light emitting device according to claim 13 , wherein the applying the resulting mixture includes inkjetting the resulting mixture onto the first electrode.

16. The method of manufacturing an organic light emitting device according to claim 13 , wherein the insulating layer is one of silicon nitride, silicon oxide and an organic insulating material.

17. An organic light emitting device comprising:

a first substrate having a display device including:

a first electrode on the first substrate for providing holes;

a second electrode facing the first electrode and providing electrons;

an organic luminescent layer interposed between the first and second electrodes; and

an electron transfer layer disposed between the second electrode and the organic luminescent layer,

wherein the electron transfer layer is a single layer including single-crystal silicon particles so that the electron transfer layer injects and transports electrons to the organic luminescent layer while preventing holes from the first electrode from flowing into the electron transfer layer;

a second substrate having a driving device; and

an encapsulating member joining the first and second substrate.

18. The organic light emitting device according to claim 17 , wherein the single-crystal silicon particles are in an insulating layer.

19. The organic light emitting device according to claim 17 , wherein each of the single-crystal silicon particles is encompasses by an insulating layer.