IP Library Granted Patent US 7,605,225
Granted Patent B2
US 7,605,225 · App. 11/803,020 · Granted Oct 20, 2009

Silole-based polymers and semiconductor materials prepared from the same

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Quick Facts
Patent No.
US 7,605,225
App. No.
11/803,020
Granted
Oct 20, 2009
Kind
B2
Abstract

The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , Z, x, and x′ are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.

Claims (35)

1. A polymer comprising a repeating unit of Formula II:

wherein:

Z is S or CR 8 =CR 9 ;

R 1 and R 2 independently are a) H, b) a C 1-20 alkyl group, c) a C 2-20 alkenyl group, d) a C 2-20 alkynyl group, e) a C 1-20 haloalkyl group, f) a —Y—C 3-14 cycloalkyl group, g) a —Y—C 6-14 aryl group, h) a —Y-3-14 membered cycloheteroalkyl group, or i) a —Y-5-14 membered heteroaryl group, wherein each of the C 1-20 alkyl group, the C 2-20 alkenyl group, the C 2-20 alkynyl group, the C 1-20 haloalkyl group, the C 3-14 cycloalkyl group, the C 6-14 aryl group, the 3-14 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group optionally is substituted with 1-4-Y—R 10 groups;

R 3 , R 4 , R 5 , and R 6 independently are a) H, b) halogen, c) —CN, d) —NO 2 , e) —OH, f) —NH 2 , g) —SH, h) —C(O)OH, i) —C(O)NH 2 , j) —S(O) 2 OH, k) —OC 1-20 alkyl, l) —NH—C 1-20 alkyl, m) —N(C 1-20 alkyl) 2 , n) —C(O)—C 1-20 alkyl, o) —C(O)—OC 1-20 alkyl, p) —C(O)NH—C 1-20 alkyl, q) —C(O)N(C 1-20 alkyl) 2 , r) —S(O) m —C 1-20 alkyl, s) —S(O) m —OC 1-20 alkyl, t) —S(O) m —NHC 1-20 alkyl, u) —S(O) m —N(C 1-20 alkyl) 2 , v) a C 1-20 alkyl group, w) a C 2-20 alkenyl group, x) a C 2-20 alkynyl group, y) a C 1-20 haloalkyl group, z) a C 3-14 cycloalkyl group, aa) a C 6-14 aryl group, ab) a 3-14 membered cycloheteroalkyl group, or ac) a 5-14 membered heteroaryl group; wherein each of the C 1-20 alkyl groups, the C 2-20 alkenyl group, the C 2-20 alkynyl group, the C 1-20 haloalkyl group, the C 3-14 cycloalkyl group, the C 6-14 aryl group, the 3-14 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group optionally is substituted with 1-4-Y—R 10 groups;

R 8 and R 9 independently are a) H, b) halogen, c) —CN, d) —NO 2 , e) —OH, f) —NH 2 , g) —SH, h) —C(O)OH, i) —C(O)NH 2 , j) —S(O) 2 OH, k) —OC 1-20 alkyl, l) —NH—C 1-20 alkyl, m) —N(C 1-20 alkyl) 2 , n) —C(O)—C 1-20 alkyl, o) —C(O)—OC 1-20 alkyl, p) —C(O)NH—C 1-20 alkyl, q) —C(O)N(C 1-20 alkyl) 2 , r) —S(O) m —C 1-20 alkyl, s) —S(O) m —OC 1-20 alkyl, t) —S(O) m —NHC 1-20 alkyl, u) —S(O) m —N(C 1-20 alkyl) 2 , v) a C 1-20 alkyl group, w) a C 2-20 alkenyl group, x) a C 2-20 alkynyl group, y) a C 1-20 haloalkyl group, z) a C 3-14 cycloalkyl group, aa) a C 6-14 aryl group, ab) a 3-14 membered cycloheteroalkyl group, or ac) a 5-14 membered heteroaryl group, wherein each of the C 1-20 alkyl groups, the C 2-20 alkenyl group, the C 2-20 alkynyl group, the C 1-20 haloalkyl group, the C 3-14 cycloalkyl group, the C 6-14 aryl group, the 3-14 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group optionally is substituted with 1-4-Y—R 10 groups;

R 10 , at each occurrence, independently is a) halogen, b) —NO 2 , c) —CN, d) oxo, e) —OH, f) —NH 2 , g) —SH, h) —C(O)OH, i) —C(O)NH 2 , j) —S(O) 2 OH, k) —OC 1-20 alkyl, l) —NH—C 1-20 alkyl, m) —N(C 1-20 alkyl) 2 , n) —C(O)—C 1-20 alkyl, o) —C(O)—OC 1-20 alkyl, p) —C(O)NH—C 1-20 alkyl, q) —C(O)N(C 1-20 alkyl) 2 , r) —S(O) m —C 1-20 alkyl, s) —S(O) m —OC 1-20 alkyl, t) —S(O) m —NHC 1-20 alkyl, u) —S(O) m —N(C 1-20 alkyl) 2 , v) a C 1-20 alkyl group, w) a C 2-20 alkenyl group, x) a C 2-20 alkynyl group, y) a C 1-20 haloalkyl group, z) a C 3-14 cycloalkyl group, aa) a C 6-14 aryl group, ab) a 3-14 membered cycloheteroalkyl group, or ac) a 5-14 membered heteroaryl group;

Y, at each occurrence, independently is a) a divalent C 1-20 alkyl group, b) a divalent C 2-20 alkenyl group, c) a divalent C 2-20 alkynyl group, d) a divalent C 1-20 haloalkyl group, or e) a covalent bond;

m, at each occurrence, independently is 0, 1, or 2; and

x is 2, 3, 4, 5, 6, 7, 8, 9, or 10.

2. The polymer of claim 1 , wherein Z is S.

3. The polymer of claim 1 , wherein Z is CH═CH.

4. The polymer of claim 1 , wherein R 1 and R 2 independently are a C 1-20 alkyl group optionally substituted with 1-4-Y—R 10 groups.

5. The polymer of claim 1 , wherein at least one of R 3 , R 4 , R 5 , and R 6 is H.

6. The polymer of claim 1 , wherein the repeating unit has Formula III:

wherein Z is S or CH═CH; x is 2; and R 1 and R 2 are as defined in claim 1 .

7. The polymer of claim 6 , wherein R 1 and R 2 independently are a hexyl group or an octyl group.

8. The polymer of claim 1 , wherein the polymer has Formula II′ or Formula III′:

wherein n is an integer in the range from 2 to about 500;

X is 2; and

R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , and Z are as defined in claim 1 .

9. The polymer of claim 1 , wherein the polymer is

wherein n is an integer in the range from 2 to about 500.

10. The polymer of claim 1 , wherein the polymer comprises one or more additional repeating units other than the repeating unit of Formula II.

11. The polymer of claim 10 , wherein the one or more additional repeating units are selected from:

wherein R 3 , R 4 , R 5 , R 6 , R 8 , and R 9 are as defined in claim 1 .

12. A composition comprising one or more polymers of claim 1 dissolved in an organic solvent or a mixture of solvents.

13. A thin film semiconductor comprising one or more polymers of claim 1 .

14. A composite comprising a substrate and the thin film semiconductor of claim 13 deposited on the substrate.

15. An organic field effect transistor device comprising the composite of claim 14 .

16. A complementary circuit comprising the thin film semiconductor of claim 13 .

17. An electronic device comprising the complementary circuit of claim 16 .

18. A composition comprising one or more polymers of claim 6 dissolved in an organic solvent or a mixture of solvents.

19. A thin film semiconductor comprising one or more polymers of claim 6 .

20. An organic field effect transistor device comprising a substrate and the thin film semiconductor of claim 19 deposited on the substrate.

Assignments (5)
CONFIRMATORY LICENSE Recorded Jun 25, 2015
From: NORTHWESTERN UNIVERSITY
To: USA AS REPRESENTED BY THE ADMINISTRATOR OF THE NASA
Reel/Frame 036028/0033 →
CONFIRMATORY LICENSE Recorded Feb 22, 2013
From: NORTHWEST UNIVERSITY
To: NAVY, SECRETARY OF THE UNITED STATES OF AMERICA
Reel/Frame 030046/0758 →
RELEASE OF SECURITY INTEREST Recorded Jun 5, 2012
From: SOLVAY NORTH AMERICA INVESTMENTS, LLC
To: POLYERA CORPORATION
Reel/Frame 028323/0253 →
SECURITY AGREEMENT Recorded Jul 27, 2011
From: POLYERA CORPORATION
To: SOLVAY NORTH AMERICA INVESTMENTS, LLC
Reel/Frame 026658/0146 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2007
From: MARKS, TOBIN J.; FACCHETTI, ANTONIO; LU, GANG; USTA, HAKAN; LETIZIA, JOSEPH
To: NORTHWESTERN UNIVERSITY
Reel/Frame 019824/0908 →