Method of manufacturing organic thin film transistor and organic thin film transistor

1. A method of manufacturing an organic thin film transistor which has a gate electrode, a gate insulation layer, a semiconductor layer, a source electrode and a drain electrode on a substrate, the method comprising the step of:

forming the semiconductor layer by applying to the source electrode, the drain electrode and therebetween a semiconductor solution into which a self-assembled monolayer material and an organic semiconductor material are mixed.

2. The method of manufacturing an organic thin film transistor of claim 1 , wherein the self-assembled monolayer material has a molecular structure represented by the following formula:

R—SH

wherein:

R is an aromatic compound containing a straight chain or branched chain alkyl, alkenyl, cycloalkyl or 6 through 25 carbon atoms;

SH is a thiol group.

3. The method of manufacturing an organic thin film transistor of claim 1 , comprising the step of:

yielding the self-assembled monolayer material on the source electrode and the drain electrode after applying to the source electrode, the drain electrode and therebetween the semiconductor solution into which the self-assembled monolayer material and the organic semiconductor material are mixed.

4. The method of manufacturing an organic thin film transistor of claim 3 , wherein the step of yielding the self-assembled monolayer material comprises the step of blowing a gas on a surface of the substrate on which the semiconductor solution has been applied.

5. The method of manufacturing an organic thin film transistor of claim 4 , wherein the step of yielding the self-assembled monolayer material comprises the step of blowing a heated gas on a surface of a heated substrate on which the semiconductor solution has been applied.

6. An organic thin film transistor, comprising:

a gate electrode;

a gate insulation layer which is formed on the gate electrode;

a source electrode which is formed on the gate insulation layer;

a drain electrode which is formed on the gate insulation layer; and

a semiconductor layer which is formed on the gate insulation layer by applying a semiconductor solution between the source electrode and the drain electrode, the semiconductor solution being a mixture of a self-assembled monolayer material and an organic semiconductor material.

7. The organic thin film transistor of claim 6 , surfaces of the source electrode and the drain electrode is formed of a material selected from the group consisting of gold, platinum, tungsten, palladium, aluminum, chrome and titanium.

8. The method of manufacturing an organic thin film transistor of claim 1 , wherein the semiconductor solution contains a solvent, and the method comprises the step of yielding the self-assembled monolayer material on the source electrode and the drain electrode by evaporating the solvent.

9. The method of manufacturing an organic thin film transistor of claim 8 , wherein the step of yielding the self-assembled monolayer material includes the step of evaporating the solvent by blowing a gas on the applied semiconductor solution.

10. The method of manufacturing an organic thin film transistor of claim 9 , wherein the gas is blown at an angle of 30° from a surface of the substrate.

11. A method of manufacturing an organic thin film transistor on an electrode formed on a substrate, the method comprising the steps of:

forming a semiconductor layer by applying to the electrode a semiconductor solution into which a self-assembled monolayer material, an organic semiconductor material and solvent are mixed; and

yielding the self-assembled monolayer material on the electrode by evaporating the solvent.

12. The method of manufacturing an organic thin film transistor of claim 11 , wherein the step of yielding the self-assembled monolayer material includes evaporating the solvent by blowing a gas on the applied semiconductor solution.

13. The method of manufacturing an organic thin film transistor of claim 12 , wherein the gas is blown at an angle of 30° from a surface of the substrate.

14. The method of manufacturing an organic thin film transistor of claim 12 , wherein the gas to be blown is a nitrogen gas or a rare gas.

15. The method of manufacturing an organic thin film transistor of claim 11 , wherein the electrode to which the semiconductor solution is applied includes a source electrode and a drain electrode.

16. A method of manufacturing an organic thin film transistor which has a gate electrode, a gate insulation layer, a semiconductor layer, a source electrode and a drain electrode on a substrate, the method comprising the steps of:

forming the semiconductor layer by applying to the source electrode, the drain electrode and therebetween a semiconductor solution into which an organic semiconductor material, solvent and a material for decreasing an electric resistivity between the both electrodes and the semiconductor layer are mixed; and

yielding the self-assembled monolayer material on the source electrode and the drain electrode by evaporating the solvent.

17. The method of manufacturing an organic thin film transistor of claim 16 , wherein the material for decreasing the electric resistivity includes a self-assembled monolayer material.

18. The method of manufacturing an organic thin film transistor of claim 16 , wherein the step of yielding the self-assembled monolayer material includes the step of evaporating the solvent by blowing a gas on the applied semiconductor solution.

19. The method of manufacturing an organic thin film transistor of claim 18 , wherein the gas is blown at an angle of 30° from a surface of the substrate.

20. The method of manufacturing an organic thin film transistor of claim 18 , wherein the gas to be blown is a nitrogen gas or a rare gas.