IP Library Granted Patent US 7,749,323
Granted Patent B2
US 7,749,323 · App. 11/806,257 · Granted Jul 6, 2010

Single crystal for scintillator and method for manufacturing same

Assignee: Hitachi Chemical Company, Ltd.
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Quick Facts
Patent No.
US 7,749,323
App. No.
11/806,257
Granted
Jul 6, 2010
Kind
B2
Abstract

A single crystal for a scintillator that is a specific single crystal of a cerium-activated orthosilicate compound that comprises 0.00005 to 0.1 wt. %, based on the entire weight of the single crystal, of at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table.

Claims (22)

1. A single crystal for a scintillator that is a single crystal of a cerium-activated orthosilicate compound, represented by general formula (1) or (2) below, that comprises 0.00005 to 0.1 wt. %, based on the entire weight of said single crystal, of at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table:

Y 2−(x+y) Ln x Ce y SiO 5   (1)

wherein Ln denotes at least one element selected from a group consisting of elements belonging to rare earth elements, x is a numerical value of 0 to 2, and y is a numerical value of more than 0 and equal to or less than 0.2;

Gd 2−(z+w) Ln z Ce w SiO 5   (2)

wherein Ln denotes at least one element selected from a group consisting of elements belonging to rare earth elements, z is a numerical value of more than 0 and equal to or less than 2, and w is a numerical value of more than 0 and equal to or less than 0.2.

2. A single crystal for a scintillator that is a single crystal of a cerium-activated orthosilicate compound, represented by general formula (3) below, that comprises 0.00005 to 0.1 wt. %, based on the entire weight of said single crystal, of at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table:

Gd 2−(p+q) Ln p Ce q SiO 5   (3)

wherein Ln denotes at least one element selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc, which are rare earth elements with an ion radius less than that of Tb, p is a numerical value of more than 0 and equal to or less than 2, and q is a numerical value of more than 0 and equal to or less than 0.2.

3. A single crystal for a scintillator that is a single crystal of a cerium-activated orthosilicate compound, represented by general formula (4) below, that comprises 0.00005 to 0.1 wt. %, based on the entire weight of said single crystal, of at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table:

Gd 2−(r+s) Lu r Ce s SiO 5   (4)

wherein r is a numerical value of more than 0 and equal to or less than 2, and s is a numerical value of more than 0 and equal to or less than 0.2.

4. The single crystal for a scintillator according to claim 1 , wherein said at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is Al and/or Ga.

5. The single crystal for a scintillator according to claim 2 , wherein said at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is Al and/or Ga.

6. The single crystal for a scintillator according to claim 3 , wherein said at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is Al and/or Ga.

7. A method for manufacturing a single crystal for a scintillator according to claim 1 , comprising a step of preparing a raw material in which at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is contained as a constituent element at 0.0002 to 0.4 wt. % based on the entire weight of the starting materials of said single crystal.

8. A method for manufacturing a single crystal for a scintillator according to claim 2 , comprising a step of preparing a raw material in which at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is contained as a constituent element at 0.0002 to 0.4 wt. % based on the entire weight of the starting materials of said single crystal.

9. A method for manufacturing a single crystal for a scintillator according to claim 3 , comprising a step of preparing a raw material in which at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is contained as a constituent element at 0.0002 to 0.4 wt. % based on the entire weight of the starting materials of said single crystal.

10. A method for manufacturing a single crystal for a scintillator according to claim 4 , comprising a step of preparing a raw material in which at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is contained as a constituent element at 0.0002 to 0.4 wt. % based on the entire weight of the starting materials of said single crystal.

11. A method for manufacturing a single crystal for a scintillator according to claim 5 , comprising a step of preparing a raw material in which at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is contained as a constituent element at 0.0002 to 0.4 wt. % based on the entire weight of the starting materials of said single crystal.

12. A method for manufacturing a single crystal for a scintillator according to claim 6 , comprising a step of preparing a raw material in which at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table is contained as a constituent element at 0.0002 to 0.4 wt. % based on the entire weight of the starting materials of said single crystal.

13. The single crystal for a scintillator of claim 1 , wherein said a single crystal of a cerium-activated orthosilicate compound is represented by said general formula (1).

14. The single crystal for a scintillator of claim 1 , wherein said a single crystal of a cerium-activated orthosilicate compound is represented by said general formula (2).

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2015
From: HITACHI CHEMICAL CO., LTD.
To: OXIDE CORPORATION
Reel/Frame 035723/0196 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 3, 2007
From: SHIMURA, NAOAKI; KURATA, YASUSHI; USUI, TATSUYA; KURASHIGE, KAZUHISA
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 019643/0891 →
Priority Claims (2)
JP P2006-149677 · May 30, 2006 · national
JP P2006-327365 · Dec 4, 2006 · national
Continuity (1)
Related Publication 20080089824A1 · Apr 17, 2008