IP Library › Patent Application 11806709
Patent Application
App. No. 11/806,709

Nitride-based semiconductor device and method of fabricating the same

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
11/806,709
Abstract

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

Claims (14)

1 - 27 . (canceled)

28 . A nitride-based semiconductor device comprising:

a first semiconductor layer, consisting of either an n-type nitride-based semiconductor layer having a wurtzite structure or an n-type nitride-based semiconductor substrate having a wurtzite structure; and

an n-side electrode formed on a back surface of said first semiconductor layer,

wherein a dislocation density is not more than 1×10 9 cm −2 in the vicinity of the interface between said first semiconductor layer and said n-side electrode, and

contact resistance between said n-side electrode and said first semiconductor layer is not more than 0.05 Ωcm 2 .

29 . The nitride-based semiconductor device according to claim 28 , wherein said dislocation density is not more than 1×10 6 cm −2 in the vicinity of the interface between said first semiconductor layer and said n-side electrode.

30 . The nitride-based semiconductor device according to claim 28 , wherein an electron carrier concentration is at least 1×10 17 cm −3 in the vicinity of the interface between said first semiconductor layer and said n-side electrode.

31 . The nitride-based semiconductor device according to claim 28 , wherein the back surface of said first semiconductor layer includes a nitrogen face of said first semiconductor layer.

32 . The nitride-based semiconductor device according to claim 28 , wherein the back surface of said first semiconductor layer has predetermined thickness processed.

33 . The nitride-based semiconductor device according to claim 28 , wherein said first semiconductor layer includes an n-type dopant.

34 . The nitride-based semiconductor device according to claim 33 , wherein said n-type dopant is oxygen.

35 . The nitride-based semiconductor device according to claim 34 , further comprising an n-type nitride semiconductor layer on said first semiconductor layer, said n-type nitride semiconductor layer doped either Si, Se, or Ge.

36 . The nitride-based semiconductor device according to claim 28 , wherein said first semiconductor layer is formed by HVPE.