Method for manufacturing semiconductor device
View Patent ↗An object is to provide a semiconductor device with excellent reproducibility which is manufactured at low cost. A manufacturing method of a semiconductor device includes steps of forming a first electrode over a substrate; forming an insulating layer over the substrate and the first electrode; pressing a mold against the insulating layer to form an opening in the insulating layer; separating the mold from the insulating layer in which the opening is formed; hardening the insulating layer in which the opening is formed to form a partition wall; forming a light-emitting layer over the first electrode and the partition wall; and forming a second electrode over the light-emitting layer. The insulating layer contains a thermosetting resin material or a light curable resin material. The partition wall has a cross-sectional taper angle of 20 to 50°, and edges of a top and bottom thereof are rounded.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first electrode over a substrate;
forming an insulating layer containing a thermoplastic resin material or a light curable resin material over the substrate and the first electrode;
pressing a mold against the insulating layer to form an opening in the insulating layer, over the first electrode, and hardening the insulating layer while the mold is pressed, thereby forming a partition wall in the insulating layer;
separating the mold from the insulating layer;
removing residue of resin material over the first electrode by wet etching or dry etching after separation of the mold;
hardening the insulating layer after the step of removing residue of resin material;
forming a light-emitting layer over the first electrode and the partition wall; and
forming a second electrode over the light-emitting layer.
2. A method for manufacturing a semiconductor device according to claim 1 , wherein the insulating layer is hardened by heating or light irradiation.
3. A method for manufacturing a semiconductor device according to claim 1 , wherein the mold is formed of a metal material or an insulating material, and a depression is formed on a surface of the mold.
4. A method for manufacturing a semiconductor device according to claim 1 , wherein the partition wall has a cross-sectional taper angle of 20 to 50°, and edges of a top and bottom of the partition wall are rounded.
5. A method for manufacturing a semiconductor device according to claim 1 , further comprising forming an electron injecting layer in direct contact with the insulating layer and covering a top portion and a side portion of the light-emitting layer.
6. A method for manufacturing a semiconductor device according to claim 5 , wherein the second electrode is in direct contact with the insulating layer.
7. A method for manufacturing a semiconductor device according to claim 1 , wherein the second electrode comprises a metal oxide.
8. A method for manufacturing a semiconductor device according to claim 1 , wherein the first electrode and the second electrode are formed in a same manner and a same material.
9. A method for manufacturing a semiconductor device according to claim 1 , wherein the first electrode and the second electrode are formed of a same material with approximately a same thickness.
10. A method for manufacturing a semiconductor device according to claim 1 , wherein the mold is formed from quartz.
11. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first electrode over a substrate;
forming an insulating layer containing a thermosetting resin material over the substrate and the first electrode;
pressing a mold against the insulating layer to form an opening in the insulating layer, over the first electrode, and hardening the insulating layer while the mold is pressed, thereby forming a partition wall in the insulating layer;
separating the mold from the insulating layer;
removing residue of resin material over the first electrode by wet etching or dry etching after separation of the mold;
hardening the insulating layer after the step of removing residue of resin material;
forming a light-emitting layer over the first electrode and the partition wall; and
forming a second electrode over the light-emitting layer.
12. A method for manufacturing a semiconductor device according to claim 11 , wherein the insulating layer is hardened by heating.
13. A method for manufacturing a semiconductor device according to claim 11 , wherein the mold is formed of a metal material or an insulating material, and a depression is formed on a surface of the mold.
14. A method for manufacturing a semiconductor device according to claim 11 , wherein the partition wall has a cross-sectional taper angle of 20 to 50°, and edges of a top and bottom of the partition wall are rounded.
15. A method for manufacturing a semiconductor device according to claim 11 , further comprising forming an electron injecting layer in direct contact with the insulating layer and covering a top portion and a side portion of the light-emitting layer.
16. A method for manufacturing a semiconductor device according to claim 15 , wherein the second electrode is in direct contact with the insulating layer.
17. A method for manufacturing a semiconductor device according to claim 11 , wherein the second electrode comprises a metal oxide.
18. A method for manufacturing a semiconductor device according to claim 11 , wherein the first electrode and the second electrode are formed in a same manner and a same material.
19. A method for manufacturing a semiconductor device according to claim 11 , wherein the first electrode and the second electrode are formed of a same material with approximately a same thickness.
20. A method for manufacturing a semiconductor device according to claim 11 , wherein the mold is formed from quartz.