Switch circuit device, and wireless circuit device and sampling circuit device employing the same
View Patent ↗A switch circuit device with improved insertion loss characteristics and isolation characteristics is provided. The switch circuit of the present invention includes a plurality of n-ch MOSFETs whose gates are connected together and whose drains and sources are connected in series, a p-ch MOSFET whose gate is connected to the gates of the plurality of n-ch MOSFETs and whose drain is connected to the source and drain of at least one pair of adjacent n-ch MOSFETs, and a voltage changing circuit for applying a low voltage to the source of the p-ch MOSFET while a high-level control voltage is applied to the gate of the p-ch MOSFET, and a high voltage to the source of the p-ch MOSFET while a low-level control voltage is applied to the gate of the p-ch MOSFET.
1. A switch circuit device comprising:
a plurality of n-ch MOSFETs whose gates are connected together and whose drains and sources are connected in series;
a p-ch MOSFET whose gate is connected to the gates of the plurality of n-ch MOSFETs and whose drain is connected to the source and drain connected to each other of at least one pair of adjacent n-ch MOSFETs of the plurality of n-ch MOSFETs; and
a voltage changing circuit for applying a low voltage to the source of the p-ch MOSFET while a high-level control voltage is applied to the gate of the p-ch MOSFET, the low voltage being lower than the high-level control voltage, and a high voltage to the source of the p-ch MOSFET while a low-level control voltage is applied to the gate of the p-ch MOSFET, the high voltage being higher than the low-level control voltage.
2. The switch circuit device according to claim 1 , wherein the voltage changing circuit includes an odd number of inverters connected in series for inverting and outputting a control voltage to be applied to the gate of the p-ch MOSFET.
3. The switch circuit device according to claim 1 , wherein the high voltage applied to the source of the p-ch MOSFET is equal to a voltage applied to a back gate of the p-ch MOSFET.
4. The switch circuit device according to claim 1 , wherein the high voltage applied to the source of the p-ch MOSFET is a voltage which causes a GIDL current of the n-ch MOSFET to be smaller than or equal to a predetermined value, and
the low voltage applied to the source of the p-ch MOSFET is a voltage which causes a GIDL current of the p-ch MOSFET to be smaller than or equal to a predetermined value.
5. The switch circuit device according to claim 1 , wherein, depending on the high- or low-level control voltage applied to the gate of the p-ch MOSFET, the voltage changing circuit applies a voltage which causes a sum of a GIDL current and a threshold current of the p-ch MOSFET to be smaller than or equal to a predetermined value, to a back gate of the p-ch MOSFET, and a voltage which causes a sum of a GIDL current and a threshold current of the n-ch MOSFET to be smaller than or equal to a predetermined value, to back gates of the plurality of n-ch MOSFETs.
6. The switch circuit device according to claim 1 , wherein a resistor or an inductor is inserted in the gate of each of the n-ch MOSFET and the p-ch MOSFET.
7. The switch circuit device according to claim 1 , wherein a resistor or an inductor is inserted in a back gate of each of the n-ch MOSFET and the p-ch MOSFET.
8. A switch circuit comprising:
a plurality of p-ch MOSFETs whose gates are connected together and whose drains and sources are connected in series;
an n-ch MOSFET whose gate is connected to the gates of the plurality of p-ch MOSFETs and whose source is connected to the source and drain connected to each other of at least one pair of adjacent p-ch MOSFETs of the plurality of p-ch MOSFETs;
an inverter for inverting and outputting a control voltage; and
a voltage changing circuit for applying a high voltage to the drain of the n-ch MOSFET while a low-level control voltage inverted and output by the inverter is applied to the gate of the n-ch MOSFET, the high voltage being higher than the low-level control voltage, and a low voltage to the drain of the n-ch MOSFET while a high-level control voltage inverted and output by the inverter is applied to the gate of the n-ch MOSFET, the low voltage being lower than the high-level control voltage.
9. The switch circuit device according to claim 8 , wherein the voltage changing circuit applies a control voltage to be input to the inverter, as it is, to the drain of the n-ch MOSFET.
10. The switch circuit device according to claim 8 , wherein the low voltage applied to the drain of the n-ch MOSFET is 0 V.
11. The switch circuit device according to claim 8 , wherein the low voltage applied to the drain of the n-ch MOSFET is a voltage which causes a GIDL current of the p-ch MOSFET to be smaller than or equal to a predetermined value, and
the high voltage applied to the drain of the n-ch MOSFET is a voltage which causes a GIDL current of the n-ch MOSFET to be smaller than or equal to a predetermined value.
12. The switch circuit device according to claim 8 , wherein, depending on the high- or low-level control voltage inverted and output by the inverter and applied to the gate of the n-ch MOSFET, the voltage changing circuit applies a voltage which causes a sum of a GIDL current and a threshold current of the n-ch MOSFET to be smaller than or equal to a predetermined value, to a back gate of the n-ch MOSFET, and a voltage which causes a sum of a GIDL current and a threshold current of the p-ch MOSFET to be smaller than or equal to a predetermined value, to back gates of the plurality of p-ch MOSFETs.
13. The switch circuit device according to claim 9 , wherein the voltage changing circuit includes an even number of inverters connected in series for outputting the control voltage.
14. The switch circuit device according to claim 8 , wherein a resistor or an inductor is inserted in the gates of the n-ch MOSFET and the p-ch MOSFET.
15. The switch circuit device according to claim 8 , wherein a resistor or an inductor is inserted in back gates of the n-ch MOSFET and the p-ch MOSFET.