Component containing a baw filter
View Patent ↗A monolithic assembly of electronic components including a semiconductor substrate, at a first level above the substrate, at least one bulk acoustic wave resonator, at a second level above the resonator, a single-crystal semiconductor layer in which are formed semiconductor components, and recesses under the semiconductor layer portions arranged above the resonators.
1. A monolithic assembly of electronic components comprising:
a substrate;
at a first level above the substrate, a resonator;
at a second level above the resonator, a single-crystal semiconductor layer in which are formed semiconductor components; and
a plurality of recesses under the single-crystal semiconductor layer, wherein a first recess of the plurality of recesses is arranged above a first portion of the resonator and a second recess of the plurality of recesses is arranged above a second portion of the resonator, and wherein the first portion is different from the second portion.
2. The monolithic assembly of claim 1 , wherein the resonator is a bulk acoustic wave resonator.
3. The monolithic assembly of claim 1 , wherein the substrate is a semiconductor substrate.
4. The monolithic assembly of claim 2 , wherein the resonator is arranged above an assembly of layers forming a Bragg minor.
5. The monolithic assembly of claim 2 , wherein with the resonator are associated a lower electrode and an upper electrode.
6. The monolithic assembly of claim 5 , wherein contacts with said upper and lower electrodes are ensured by vias running down from a surface of the monolithic assembly arranged on the side of said single-crystal semiconductor layer.
7. An electronic product comprising at least one of a cell phone, a computer, a personal computer, a remote control, a walkman comprising the monolithic assembly of claim 2 .
8. The monolithic assembly of claim 1 , wherein the second portion of the resonator is coated with a layer so that the second portion of the resonator causes vibrations at frequencies different from frequencies of vibrations caused by the first portion of the resonator.
9. The monolithic assembly of claim 1 , wherein the first and second recesses essentially form a vacuum above the first and second portions of the resonator.
10. The monolithic assembly of claim 1 , wherein the first and second recesses are filled with at least one gas under a low pressure.
11. A circuit comprising:
a substrate;
above the substrate, a resonator associated with a lower electrode and an upper electrode;
an insulting layer located above the resonator,
a single-crystal semiconductor layer comprising semiconductor components; and
a plurality of recesses under the single-crystal semiconductor layer, wherein a first recess of the plurality of recesses is arranged above a first portion of the resonator and a second recess of the plurality of recesses is arranged above a second portion of the resonator, wherein,
the single-crystal semiconductor layer comprises a first opening extending through the insulting layer to the lower electrode and a second opening extending through the insulting layer to the upper electrode.
12. The circuit of claim 11 , wherein the resonator comprises a bulk acoustic wave resonator.
13. An assembly of electronic components comprising:
a first wafer, comprising:
a substrate;
at least one resonator arranged above the substrate and associated with a lower electrode and an upper electrode; and
an upper insulating layer comprising a plurality of recesses; and
a second wafer located above the first wafer, the second wafer comprising:
a plurality of semiconductor components;
an insulating layer above the plurality of semiconductor components, the insulating layers comprising:
a first opening that extends from a surface of the insulating layer through the first wafer to the upper electrode, and
a second opening that extends from the surface of the insulating layer of the second wafer through the first wafer to the lower electrode.
14. The assembly of claim 13 , wherein the insulating layer of the second wafer comprises a single-crystal semiconductor layer.
15. The assembly of claim 13 , wherein the plurality of recesses comprises a first recess arranged above a first portion of the resonator and a second recess is arranged above a second portion of the resonator.
16. The assembly of claim 15 , wherein the first and second recesses essentially form a vacuum above the first and second portions of the resonator.