Organic thin-film transistor and manufacturing method thereof
View Patent ↗Disclosed are an organic thin-film transistor and a manufacturing method thereof, the organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins.
1. A manufacturing process of an organic thin-film transistor comprising a support and provided thereon, a gate electrode, an insulation layer, a source electrode, a drain electrode, and an organic semiconductor layer, the support comprising at least one of resins, and the organic semiconductor layer containing at least one of organic semiconducting materials, wherein a phase transition temperature of one of the organic semiconducting materials is not more than a glass transition point of one of the resins, the process comprising the steps of:
providing a solution or dispersion solution of the organic semiconducting material;
coating the solution or dispersion solution on the support or on the insulation layer to form an organic semiconductor layer;
heat treating the resulting organic semiconductor layer; and
cooling the heat treated organic semiconductor layer at a cooling speed of not more than 5° C./sec.
2. The manufacturing process of claim 1 , comprising the step of heat treating the organic semiconductor layer at a heating temperature between the phase transition temperature and the glass transition point.
3. The manufacturing process of claim 2 , wherein the heating temperature is in the range of from 100 to 250° C.
4. The manufacturing process of claim 2 , wherein the phase transition temperature is in the range of from 100 to 240° C.
5. The manufacturing process of claim 2 , wherein the glass transition temperature is in the range of from 110 to 250° C.
6. The manufacturing process of claim 1 , wherein one of the organic semiconducting materials is a n-conjugated polymer or oligomer.
7. The manufacturing process of claim 6 , wherein the n-conjugated polymer is a homopolymer or copolymer of thiophene and the n-conjugated oligomer is a homo-oligomer or co-oligomer of thiophene.
8. The manufacturing process of claim 7 , wherein the homopolymer or copolymer of thiophene is a homopolymer or copolymer containing a unit with two or more 3-alkylthiophene rings regioregularly connected in series, and the homo-oligomer or co-oligomer of thiophene is a homo-oligomer or co-oligomer containing a unit with two or more 3-alkylthiophene rings regioregularly connected in series.
9. The manufacturing process of claim 8 , wherein the alkyl group of the 3-alkylthiophene rings is an alkyl group having a carbon atom number of from 4 to 15.