Chemically amplified resist material and pattern formation method using the same
In the pattern formation method, a resist film is formed on a substrate by using a chemically amplified resist material including fumaric acid substituted by an acid labile group released by an acid; an alkali-soluble polymer soluble in an alkaline solution; and a photo-acid generator for generating an acid through irradiation with light. Subsequently, pattern exposure is carried out by selectively irradiating the resist film with exposing light, and a resist pattern is formed by developing the resist film after the pattern exposure.
1 . A chemically amplified resist material comprising:
fumaric acid substituted by an acid labile group released by an acid;
an alkali-soluble polymer soluble in an alkaline solution; and
a photo-acid generator for generating an acid through irradiation with light.
2 . The chemically amplified resist material of claim 1 ,
wherein said acid labile group is a t-butyl group, a t-butyloxycarbonyl group, a methoxymethyl group, an adamantyloxymethyl group, an ethoxyethyl group or a 2-methyl-2-adamantyl group.
3 . The chemically amplified resist material of claim 1 ,
wherein said alkali-soluble polymer is polyacrylic acid, polymethacrylic acid, polynorbornene methyl carboxylic acid, polynorbornene carboxylic acid, polynorbornene methyl hexafluoroisopropyl alcohol, polynorbornene hexafluoroisopropyl alcohol or polyvinyl phenol.
4 . The chemically amplified resist material of claim 1 ,
wherein said photo-acid generator is triphenylsulfonium nonafluorobutane sulfonate, triphenylsulfonium trifluoromethane sulfonate or 1,3-diphenyl diazodisulfone.
5 . A chemically amplified resist material comprising:
fumaric acid substituted by a first acid labile group released by an acid;
a polymer in which an alkali-soluble polymer soluble in an alkaline solution is substituted by a second acid labile group; and
a photo-acid generator for generating an acid through irradiation with light.
6 . The chemically amplified resist material of claim 5 ,
wherein said first acid labile group is a t-butyl group, a t-butyloxycarbonyl group, a methoxymethyl group, an adamantyloxymethyl group, an ethoxyethyl group or a 2-methyl-2-adamantyl group.
7 . The chemically amplified resist material of claim 5 ,
wherein said second acid labile group is a t-butyl group, a t-butyloxycarbonyl group, a methoxymethyl group, an adamantyloxymethyl group, an ethoxyethyl group or a 2-methyl-2-adamantyl group.
8 . The chemically amplified resist material of claim 5 ,
wherein said alkali-soluble polymer is polyacrylic acid, polymethacrylic acid, polynorbornene methyl carboxylic acid, polynorbornene carboxylic acid, polynorbornene methyl hexafluoroisopropyl alcohol, polynorbornene hexafluoroisopropyl alcohol or polyvinyl phenol.
9 . The chemically amplified resist material of claim 5 ,
wherein said photo-acid generator is triphenylsulfonium nonafluorobutane sulfonate, triphenylsulfonium trifluoromethane sulfonate or 1,3-diphenyl diazodisulfone.
10 . A pattern formation method comprising the steps of:
forming, on a substrate, a resist film by using a chemically amplified resist material including fumaric acid substituted by a first acid labile group released by an acid, an alkali-soluble polymer soluble in an alkaline solution, and a photo-acid generator for generating an acid through irradiation with light;
performing pattern exposure by selectively irradiating said resist film with exposing light; and
forming a resist pattern by developing said resist film after the pattern exposure.
11 . The pattern formation method of claim 10 ,
wherein said alkali-soluble polymer is substituted by a second acid labile group released by an acid.
12 . The pattern formation method of claim 10 ,
wherein said first acid labile group is a t-butyl group, a t-butyloxycarbonyl group, a methoxymethyl group, an adamantyloxymethyl group, an ethoxyethyl group or a 2-methyl-2-adamantyl group.
13 . The pattern formation method of claim 10 ,
wherein said alkali-soluble polymer is polyacrylic acid, polymethacrylic acid, polynorbornene methyl carboxylic acid, polynorbornene carboxylic acid, polynorbornene methyl hexafluoroisopropyl alcohol, polynorbornene hexafluoroisopropyl alcohol or polyvinyl phenol.
14 . The pattern formation method of claim 10 ,
wherein said photo-acid generator is triphenylsulfonium nonafluorobutane sulfonate, triphenylsulfonium trifluoromethane sulfonate or 1,3-diphenyl diazodisulfone.
15 . The pattern formation method of claim 10 ,
wherein said exposing light is extreme ultraviolet (EUV) or electron beam (EB).
16 . The pattern formation method of claim 10 ,
wherein said exposing light is ArF excimer laser, KrF excimer laser, Xe 2 laser, F 2 laser, KrAr laser or Ar 2 laser.
17 . A pattern formation method comprising the steps of:
forming, on a substrate, a resist film by using a chemically amplified resist material including fumaric acid substituted by a first acid labile group released by an acid, an alkali-soluble polymer soluble in an alkaline solution, and a photo-acid generator for generating an acid through irradiation with light;
performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film; and
forming a resist pattern by developing said resist film after the pattern exposure.
18 . The pattern formation method of claim 17 ,
wherein said alkali-soluble polymer is substituted by a second acid labile group released by an acid.
19 . The pattern formation method of claim 18 ,
wherein said second acid labile group is a t-butyl group, a t-butyloxycarbonyl group, a methoxymethyl group, an adamantyloxymethyl group, an ethoxyethyl group or a 2-methyl-2-adamantyl group.
20 . The pattern formation method of claim 17 ,
wherein said first acid labile group is a t-butyl group, a t-butyloxycarbonyl group, a methoxymethyl group, an adamantyloxymethyl group, an ethoxyethyl group or a 2-methyl-2-adamantyl group.
21 . The pattern formation method of claim 17 ,
wherein said alkali-soluble polymer is polyacrylic acid, polymethacrylic acid, polynorbornene methyl carboxylic acid, polynorbornene carboxylic acid, polynorbornene methyl hexafluoroisopropyl alcohol, polynorbornene hexafluoroisopropyl alcohol or polyvinyl phenol.
22 . The pattern formation method of claim 17 ,
wherein said photo-acid generator is triphenylsulfonium nonafluorobutane sulfonate, triphenylsulfonium trifluoromethane sulfonate or 1,3-diphenyl diazodisulfone.
23 . The pattern formation method of claim 17 ,
wherein said liquid is water.
24 . The pattern formation method of claim 17 ,
wherein said liquid is an acidic solution.
25 . The pattern formation method of claim 24 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
26 . The pattern formation method of claim 17 ,
wherein said exposing light is ArF excimer laser, KrF excimer laser, Xe 2 laser, F 2 laser, KrAr laser or Ar 2 laser.