Fabricating method of semiconductor device

1. A fabricating method of a semiconductor device comprising:

defining a fuse region and a wiring region on a base to form a fuse in the fuse region of the base;

forming a first insulation film on the base and the fuse;

forming a first contact opening through the first insulation film in the wiring region;

forming a second insulation film on a first plug and the first insulation film;

forming a second contact opening and a stopper opening through the second insulation film so as to respectively expose a surface of the first plug, and a surface of the first insulation film over the fuse region;

filling, with a conductive material, the second contact opening to form a second plug, and the stopper opening to form a stopper film, the second plug being stacked directly on the first plug to form a single plug;

forming a wiring pattern on the second insulation film in the wiring region;

forming an interlayer insulation film on the stopper film, the wiring pattern and the second insulation film;

exposing the stopper film by removing the interlayer insulation film in the fuse region by etching; and

removing the stopper film by etching.

2. The fabricating method of the semiconductor device of claim 1 , further comprising forming a lamination in which a conductive film and a silicon nitride film are laminated on the base as the fuse.

3. The fabricating method of the semiconductor device of claim 1 , wherein the stopper opening is formed in a size larger than that of the fuse region.

4. The fabricating method of the semiconductor device of claim 2 , wherein the stopper opening is formed in a size larger than that of the fuse region.

5. The fabricating method of the semiconductor device of claim 1 , wherein tungsten is used as the conductive material.

6. The fabricating method of the semiconductor device of claim 2 , wherein tungsten is used as the conductive material.

7. The fabricating method of the semiconductor device of claim 1 , wherein the wiring pattern is formed of a material mainly composed of aluminum.

8. The fabricating method of the semiconductor device of claim 2 , wherein the wiring pattern is formed of a material mainly composed of aluminum.

9. The fabricating method of the semiconductor device of claim 1 , wherein the second plug is stacked directly on the first plug to form a single plug through the first insulation film and the second insulation film.

10. The fabricating method of the semiconductor device of claim 1 , wherein the forming the second contact opening and the stopper opening occurs concurrently.

11. The fabricating method of the semiconductor device of claim 1 , wherein the filling the second contact opening and the stopper opening occurs concurrently.

12. A method of fabricating a semiconductor device, the method comprising:

forming a fuse on the surface of a base in a fuse region of the semiconductor device;

forming a first insulation film over the base and the fuse;

forming a first contact opening through the first insulation film in a wiring region of the semiconductor device;

filling the contact opening with a conductive material to form a first plug in the contact opening;

forming a second insulation film over the first plug and the first insulation film;

forming, through the second insulation film, a second contact opening over the first contact opening, and a stopper opening in the fuse region;

filling, with a conductive material, the second contact opening to form a second plug stacked directly on the first plug, and the stopper opening to form a stopper film;

forming, in the wiring region, a wiring pattern on the second insulation film;

forming an interlayer insulation film over the stopper film, the wiring pattern, and the second insulation film;

removing, by etching, the interlayer insulation film in the wiring region to expose the stopper film; and

removing, by etching, the stopper film.