IP Library Granted Patent US 7,855,501
Granted Patent B2
US 7,855,501 · App. 11/814,349 · Granted Dec 21, 2010

LED with phosphor layer having different thickness or different phosphor concentration

Assignee: Panasonic Corporation
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Quick Facts
Patent No.
US 7,855,501
App. No.
11/814,349
Filed
Jul 19, 2007
Granted
Dec 21, 2010
Kind
B2
Art Unit
2879
USPC
313/501
Abstract

A light-emitting device ( 1 ) includes a substrate ( 10 ), a light-emitting element ( 12 ) that is mounted on the substrate ( 10 ) and includes a luminous region ( 12 b ) and a nonluminous region ( 12 a ), and a phosphor layer ( 13 ) that is formed to cover the light-emitting element ( 12 ). The thickness of the phosphor layer ( 13 a ) located on the nonluminous region ( 12 a ) is smaller than that of the phosphor layer ( 13 b ) located on the luminous region ( 12 b ). The light-emitting device ( 1 ) can suppress nonuniform luminescent color.

Claims (32)

1. A light-emitting device, comprising:

a substrate;

a light-emitting element that is mounted on the substrate and comprises a luminous region and a nonluminous region; and

a phosphor layer that is formed to cover the light-emitting element and includes a phosphor,

wherein a thickness of the phosphor layer located on the nonluminous region is smaller than that of the phosphor layer located on the luminous region,

the thickness of the phosphor layer located on the luminous region is constant,

the thickness of the phosphor layer located on the nonluminous region is constant,

a surface of the phosphor layer located on the luminous region is flat, and

a surface of the phosphor layer located on the nonluminous region is flat,

wherein the thickness of the phosphor layer located on the nonluminous region is ⅓ to ⅔ of the thickness of the phosphor layer located on the luminous region,

wherein the thickness of the phosphor layer located on the nonluminous region is 60 to 100 μm and the thickness of the phosphor layer located on the luminous region is 100 to 150 μm.

2. The light-emitting device according to claim 1 , wherein a thickness of a sidewall of the phosphor layer located along a side of the nonluminous region is smaller than that of a sidewall of the phosphor layer located along a side of the luminous region.

3. The light-emitting device according to claim 1 , wherein the light-emitting element is flip-chip mounted on the substrate.

4. The light-emitting device according to claim 1 , wherein the nonluminous region includes a region where an electrode is provided.

5. A display unit comprising the light-emitting device according to claim 1 .

6. A lighting unit comprising the light-emitting device according to claim 1 .

7. A light-emitting device, comprising:

a substrate;

a light-emitting element that is mounted on the substrate and comprises a luminous region and a nonluminous region; and

a phosphor layer that is formed to cover the light-emitting element and includes a phosphor,

wherein a concentration of the phosphor in the phosphor layer located on the nonluminous region is lower than that of the phosphor in the phosphor layer located on the luminous region,

a thickness of the phosphor layer located on the luminous region being the same as a thickness of the phosphor layer located on the nonluminous region,

a surface of the phosphor layer located on the luminous region is flat, and

a surface of the phosphor layer located on the nonluminous region is flat,

wherein the concentration of the phosphor in the phosphor layer located on the nonluminous region is ⅓ to ⅔ of the concentration of the phosphor in the phosphor layer located on the luminous region,

wherein the concentration of the phosphor included in the phosphor layer located on the nonluminous region is 40 to 46 mass % of the phosphor layer, and

wherein the concentration of the phosphor included in the phosphor layer located on the luminous region is 60 to 70 mass % of the phosphor layer.

8. The light-emitting device according to claim 7 , wherein a concentration of the phosphor in a sidewall of the phosphor layer located along a side of the nonluminous region is lower than that of the phosphor in a sidewall of the phosphor layer located along a side of the luminous region.

9. The light-emitting device according to claim 7 , wherein the light-emitting element is a flip-chip mounted on the substrate.

10. The light-emitting device according to claim 7 , wherein the nonluminous region includes a region where an electrode is provided.

11. A display unit, comprising the light-emitting device according to claim 7 .

12. A lighting unit, comprising the light-emitting device according to claim 7 .

Assignments (2)
CHANGE OF NAME Recorded Nov 3, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021779/0851 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2007
From: TANIMOTO, NORIYASU; OGATA, TOSHIFUMI; SHIDA, SATOSHI; NAITO, HIROYUKI
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 020030/0187 →
Priority Claims (1)
JP 2005-139916 · May 12, 2005 · national
Continuity (1)
Related Publication 20090001869A1 · Jan 1, 2009