Dielectric porcelain composition and high frequency device using the same
View Patent ↗A dielectric porcelain composition of the present invention includes a first component and second component. If the first component is represented by the general formula of xBaO-yNd 2 O 3 -zTiO 2 -wBi 2 O 3 (provided that x+y+z+w=100), x, y, z, and w satisfy 12≦x≦16, 12≦y≦16, 65≦z≦69, and 2≦w≦5, respectively. The second component includes 30 to 37 wt % of BaO, 33 to 46 wt % of SiO 2 , 8 to 12 wt % of La 2 O 3 , 3 to 7 wt % of Al 2 O 3 , 0 to 1 wt % of SrO, 0 to 10 wt % of Li 2 O, 0 to 20 wt % of ZnO, and 7 wt % or less of B 2 0 3 . The compounding ratio of the second component is between 10 wt % and 30 wt % when the sum of the first and second components is 100. In addition, 0.1 to 1 parts by weight of Li 2 O and 3 to 10 parts by weight of ZnO, relative to 100 parts by weight of the sum of the first and second components, is also contained as a third component. An average particle diameter of the dielectric mixed powder forming dielectric porcelain composition before firing is 0.9 μm or less.
1. A dielectric porcelain composition comprising:
a first component represented by a formula of xBaO-yNd 2 O 3 -zTiO 2 -wBi 2 O 3 ; x, y, z, and w satisfying 12≦x≦16, 12≦y≦16, 65≦z≦69, and 2≦w≦5, provided that x, y, z, and w are molar ratios and x+y+z+w=100;
a second component including, in weight ratio, 30 to 37 wt % of BaO, 33 to 46 wt % of SiO 2 , 8 to 12 wt % of La 2 O 3 , 3 to 7 wt % of Al 2 O 3 , 0 to 1 wt % of SrO, 0 to 10 wt % of Li 2 O, 0 to 20 wt % of ZnO, and 7 wt % or less of B 2 O 3 , a compounding ratio of the second component being 10 wt % to 30 wt % when a sum of the first component and the second component is 100; and
a third component including 0.1 to 1 parts by weight of Li 2 O and 3 to 10 parts by weight of ZnO, relative to 100 parts by weight of the sum of the first component and the second component;
wherein
an average particle diameter of a dielectric mixed powder before firing is not greater than 0.9 μm, the dielectric mixed powder including a first powder component comprising the first component, a second powder component comprising the second component, and a third powder component comprising the third component; and
the dielectric porcelain composition is a sintered body made by firing the dielectric mixed powder.
2. The dielectric porcelain composition of claim 1 , wherein the sintered body has a columnar grain on a part of its surface, and a percentage of the columnar grain is not greater than 60% of an entire surface.
3. The dielectric porcelain composition of claim 2 , wherein the sintered body has the columnar grain in a part of a fine structure of its surface, and a ratio of a long axis to a short axis of the columnar grain is 1≦(Long axis/short axis)≦25.
4. A high frequency device comprising:
a laminated body including a dielectric porcelain composition; and
an internal electrode forming a predetermined high frequency circuit in an inner layer of the laminated body;
wherein
the dielectric porcelain composition includes a first component, a second component, and a third component,
the first component being represented by a formula of xBaO-yNd 2 O 3 -zTiO 2 -wBi 2 O 3 ; x, y, z, and w satisfying 12≦x≦16, 12≦y≦16, 65≦z≦69, and 2≦w≦5, provided that x, y, z, and w are molar ratios and x+y+z+w=100;
the second component including, in weight ratio, 30 to 37 wt % of BaO, 33 to 46 Wt % of SiO 2 , 8 to 12 wt % of La 2 O 3 , 3 to 7 wt % of Al 2 O 3 , 0 to 1 wt % of SrO, 0 to 10 wt % of Li 2 O, 0 to 20 wt % of ZnO, and 7 wt % or less of B 2 O 3 , a compounding ratio of the second component being 10 wt % to 30 wt % when a sum of the first component and the second component is 100; and
the third component including 0.1 to 1 parts by weight of Li 2 O and 3 to 10 parts by weight of ZnO, relative to 100 parts by weight of a sum of the first component and the second component;
wherein
an average particle diameter of a dielectric mixed powder before firing is not greater than 0.9 μm, the dielectric mixed powder including a first powder component comprising the first component, a second powder component comprising the second component and a third powder component comprising the third component; and
the dielectric porcelain composition is a sintered body made by firing the dielectric mixed powder.
5. The high frequency device of claim 4 , wherein the sintered body has a columnar grain on a part of its surface, and a percentage of the columnar grain is not greater than 60% of an entire surface.
6. The high frequency device of claim 5 , wherein the sintered body has the columnar grain in a part of a fine structure of its surface, and a ratio of a long axis to a short axis of the columnar grain is 1≦(Long axis/short axis)≦25.
7. The high frequency device of claim 4 , the high frequency device comprising:
the laminated body made of the dielectric porcelain composition; and
the internal electrode forming the predetermined high frequency circuit in the inner layer of the laminated body;
wherein the high frequency device has a space between an end of the internal electrode and a body of the dielectric porcelain, a length of the space being not longer than 15 μm.
8. A dielectric porcelain composition made of a sintered body, the sintered body comprising:
a first component being represented by a formula of xBaO-yNd 2 O 3 -zTiO 2 -wBi 2 O 3 ; x, y, z, and w satisfying 12≦x≦16, 12≦y≦16, 65≦z≦69, and 2≦w≦5, provided that x, y, z, and w are molar ratios and x+y+z+w=100;
a second component including, in weight comparison, 30 to 37 wt % of BaO, 33 to 46 wt % of SiO 2 , 8 to 12 wt % of La 2 O 3 , 3 to 7 wt % of Al 2 O 3 , 0 to 1 wt % of SrO, 0 to 10 wt % of Li 2 O, 0 to 20 wt % of ZnO, and 7 wt % or less of B 2 O 3 , a compounding ratio of the second component being 10 wt % to 30 wt % when a sum of the first component and the second component is 100; and
a third component including 0.1 to 1 parts by weight of Li 2 O and 3 to 10 parts by weight of ZnO, relative to 100 parts by weight of a sum of the first component and the second component;
wherein the sintered body has a columnar grain on a part of its surface, and a percentage of the columnar grain is not greater than 60% of an entire surface.
9. The dielectric porcelain composition of claim 8 , wherein the sintered body has the columnar grain in a part of a fine structure of its surface, and a ratio of a long axis to a short axis of the columnar grain is 1≦(Long axis/short axis)≦25.
10. The high frequency device of claim 5 , the high frequency device comprising:
the laminated body made of the dielectric porcelain composition; and
the internal electrode forming the predetermined high frequency circuit in the inner layer of the laminated body;
wherein the high frequency device has a space between an end of the internal electrode and a body of the dielectric porcelain, a length of the space being not longer than 15 μm.
11. The high frequency device of claim 6 , the high frequency device comprising:
the laminated body made of the dielectric porcelain composition; and
the internal electrode forming the predetermined high frequency circuit in the inner layer of the laminated body;
wherein the high frequency device has a space between an end of the internal electrode and a body of the dielectric porcelain, a length of the space being not longer than 15 μm.