Manufacturing method of semiconductor integrated circuit device
View Patent ↗A probe is contacted to a test pad, without destroying the circuit formed in the chip at the time of a probe test. Therefore, a load jig, a pressing tool, an elastomer, an adhesion ring, and a plunger are made into one by fixation with a nut and a bolt. The elastic force of the spring installed between the spring retaining jig and the load jig acts so that the member used as these one may be depressed toward pad PD. The thrust transmitted from the spring in a plunger to a thin films sheet is used only for the extension of a thin films sheet.
1. A method of manufacturing a semiconductor integrated circuit device, comprising the steps of;
(a) preparing a semiconductor wafer which is demarcated in a plurality of chip areas, in which a semiconductor integrated circuit is formed in each of the chip areas, and over which a plurality of first electrodes electrically connected with the semiconductor integrated circuit are formed over a main surface;
(b) preparing a first card including a first wiring substrate in which a first wiring is formed, a first sheet which is held at the first wiring substrate, in which a plurality of contact terminals for making contact with the first electrodes and a second wiring which electrically connects with the contact terminals are formed, and with which the second wiring electrically connects with the first wiring, and a tip of the contact terminals faces a main surface of the semiconductor wafer, an adhesion ring which spaces out and holds a first region in which the contact terminals are formed in the first sheet from the first wiring substrate, an extrusion mechanism which extrudes the first region in the first sheet from a back surface side, a plunger mechanism which travels to and pushes with a thrust on the extrusion mechanism so as to extend the first sheet, and a pressurizing mechanism which controls an amount of contact pressurization of the contact terminals on the first electrodes by acting on the extrusion mechanism at a time of contacting the tip of the contact terminals to the first electrodes
wherein a lower surface of the adhesion ring contacts the first sheet,
wherein the extrusion mechanism, the adhesion ring, and the plunger mechanism constitute one mechanism by fixation, wherein the pressurizing mechanism is disposed over the adhesion ring such that the thrust transmitted to the first sheet is controlled by a strength of the pressurizing mechanism; and
(c) conducting an electric test of the semiconductor integrated circuit by contacting the tip of the contact terminals to the first electrodes;
wherein an extrusion amount of the first region by the extrusion mechanism and the amount of contact pressurization by the pressurizing mechanism are controlled independently, respectively.
2. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein a tip of the contact terminal is extruded from the adhesion ring.
3. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein in the step (c), a load applied to the one contact terminal is less than 3 g.
4. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein an insulating film with a low dielectric constant compared with Si0 2 is formed over the main surface of the semiconductor wafer.
5. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the semiconductor integrated circuit is arranged under the first electrode.
6. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the first electrode is a projection electrode including gold as a principal component, or a pad electrode including aluminum as a principal component.
7. A method of manufacturing a semiconductor integrated circuit device, comprising the steps of;
(a) preparing a semiconductor wafer which is demarcated in a plurality of chip areas, in which a semiconductor integrated circuit is formed in each of the chip areas, and over which a plurality of first electrodes electrically connected with the semiconductor integrated circuit are formed over a main surface;
(b) preparing a first card including a first wiring substrate in which a first wiring is formed, a first sheet which is held at the first wiring substrate, in which a plurality of contact terminals for making contact with the first electrodes and a second wiring which electrically connects with the contact terminals are formed, and with which the second wiring electrically connects with the first wiring, and a tip of the contact terminals faces a main surface of the semiconductor wafer, an adhesion ring which spaces out and holds a first region in which the contact terminals are formed in the first sheet from the first wiring substrate, an extrusion mechanism which extrudes the first region in the first sheet from a back surface side, a plunger mechanism which travels to and pushes with a thrust to the extrusion mechanism so as to extend the first sheet, and a pressurizing mechanism which controls an amount of contact pressurization of the contact terminals on the first electrodes by acting on the extrusion mechanism at a time of contacting the tip of the contact terminals to the first electrodes, the spring mechanism and the pressurizing mechanism being controlled independently of one another,
wherein a lower surface of the adhesion ring contacts the first sheet,
wherein the extrusion mechanism, the adhesion ring, and the plunger mechanism constitute one mechanism by fixation, wherein the pressurizing mechanism is disposed over the adhesion ring such that the thrust transmitted to the first sheet is controlled by a strength of the pressurizing mechanism; and
(c) conducting an electric test of the semiconductor integrated circuit by contacting the tip of the contact terminals to the first electrodes;
wherein
the extrusion mechanism is stuck over the back surface side of the first region of the first sheet; and
an extrusion amount of the first region by the extrusion mechanism and the amount of contact pressurization by the pressurizing mechanism are controlled independently, respectively.
8. A method of manufacturing a semiconductor integrated circuit device according to claim 7 , wherein a tip of the contact terminal is extruded from the adhesion ring.
9. A method of manufacturing a semiconductor integrated circuit device according to claim 7 , wherein in the step (c), load applied to the one contact terminal is less than 3 g.
10. A method of manufacturing a semiconductor integrated circuit device according to claim 7 , wherein an insulating film with a low dielectric constant compared with Si0 2 is formed over the main surface of the semiconductor wafer.
11. A method of manufacturing a semiconductor integrated circuit device according to claim 8 , wherein the semiconductor integrated circuit is arranged under the first electrode.
12. A method of manufacturing a semiconductor integrated circuit device according to claim 9 , wherein the first electrode is a projection electrode including gold as a principal component, or a pad electrode including aluminum as a principal component.
13. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the pressurizing mechanism acts such that the extrusion mechanism extrudes the first region in the first sheet from the back surface side at the contacting time.
14. A method of manufacturing a semiconductor integrated circuit device according to claim 13 , wherein, at the contacting time, a thrust transmitted from the spring mechanism to the first sheet is used for an extension of the first sheet.
15. A method of manufacturing a semiconductor integrated circuit device according to claim 13 , wherein, at the contacting time, a thrust transmitted from the spring mechanism to the first sheet is used only for an extension of the first sheet.
16. A method of manufacturing a semiconductor integrated circuit device according to claim 7 , wherein the pressurizing mechanism acts such that the extrusion mechanism extrudes the first region in the first sheet from the back surface side at the contacting time.
17. A method of manufacturing a semiconductor integrated circuit device according to claim 16 , wherein, at the contacting time, a thrust transmitted from the spring mechanism to the first sheet is used for an extension of the first sheet.
18. A method of manufacturing a semiconductor integrated circuit device according to claim 16 , wherein, at the contacting time, a thrust transmitted from the spring mechanism to the first sheet is used only for an extension of the first sheet.
19. The method according to claim 1 , wherein the plunger mechanism includes a plunger and a spring mechanism built in the plunger.
20. The method according to claim 7 , wherein the plunger mechanism includes a plunger and a spring mechanism built in the plunger.
21. The method according to claim 1 , wherein the pressurizing mechanism includes a spring mechanism.
22. The method according to claim 7 , wherein the pressurizing mechanism includes a spring mechanism.
23. The method according to claim 1 , wherein the plunger mechanism serves to make the first sheet extend out from an under surface of the first wiring substrate.
24. The method according to claim 7 , wherein the plunger mechanism serves to make the first sheet extend out from an under surface of the first wiring substrate.