In an LED array comprising a plurality of radiation-emitting semiconductor chips each of which has a radiation outcoupling surface, the radiation emitted by the semiconductor chips being outcoupled substantially through said radiation outcoupling surface, and a cover body that is transparent to the emitted radiation, the transparent cover body comprises, on a surface facing toward the radiation outcoupling surfaces of the semiconductor chips, one or more conductive traces made of a conductive material that is transparent to the emitted radiation, and the semiconductor chips each comprise, on the radiation outcoupling surface, at least one electrical contact that is connected to the conductive trace or to at least one of the plurality of conductive traces. At least one luminescence conversion material is contained in the transparent cover body and/or applied in a layer to the cover body and/or the semiconductor chips.
1. An LED array comprising a plurality of radiation-emitting semiconductor chips each of which has a radiation outcoupling surface, the radiation emitted by said semiconductor chips being outcoupled substantially through said radiation outcoupling surfaces, and a cover body that is transparent to the emitted radiation, characterized in that
said transparent cover body comprises, on a surface facing toward said radiation outcoupling surfaces of said semiconductor chips, one or more conductive traces made of a conductive material that is transparent to said emitted radiation, said semiconductor chips each comprising, on said radiation outcoupling surface, at least one electrical contact that is connected to at least one of the plurality of said conductive traces, and
at least one luminescence conversion material is contained in the transparent cover body and/or is applied in a layer to said cover body and/or to said semiconductor chips.
2. The LED array as in claim 1 , wherein said transparent conductive material is a transparent conductive oxide.
3. The LED array as in claim 2 , wherein said transparent conductive oxide is ITO.
4. The LED array as in claim 1 , wherein said cover body is a cover plate.
5. The LED array as in claim 4 , wherein said cover plate has a thickness of 100 μm or less.
6. The LED array as in claim 1 , wherein said cover body is formed from a glass.
7. The LED array as in claim 1 , wherein said electrical contact is formed from a solder or an electrically conductive adhesive.
8. The LED array as in claim 1 , wherein said semiconductor chips each comprise a base surface disposed opposite said radiation outcoupling surface, said semiconductor chips being mounted by said base surface on a carrier body.
9. The LED array as in claim 1 , wherein said plurality of semiconductor chips comprises at least four radiation-emitting semiconductor chips.
10. The LED array as in claim 1 , wherein said LED array comprises at least one optical element for beam-shaping said radiation emitted by said semiconductor chips.
11. The LED array as in claim 10 , wherein a distance between said optical element and said radiation outcoupling surface is 300 μm or less.
12. The LED array as in claim 11 , wherein said optical element is a CPC-, CEC- or CHC-type optical concentrator.
13. The LED array as in claim 1 , wherein said cover body is configured as an optical element.
14. The LED array as in claim 1 , wherein said cover body is a cover film.
15. The LED array as in claim 1 , wherein said semiconductor chips contain a III-V compound semiconductor material.
16. The LED array as in claim 1 , wherein said semiconductor chips are thin-film light-emitting diode chips.
17. The LED array as in claim 4 , wherein said cover plate has a thickness of 50 μm or less.