Weldable contact and method for the production thereof
View Patent ↗A solderable contact for use with an electrical component includes a pad metallization on a substrate, and an under bump metallization over at least part of the pad metallization. The under bump metallization is in an area for receiving solder. The pad metallization is structured to reveal parts of the substrate surface. The under bump metallization is in direct contact with the parts of the substrate.
1. A solderable contact for use with an electrical component, the solderable contact comprising:
a pad metallization on a substrate, the pad metallization having a lateral extent; and
an under bump metallization over at least part of the pad metallization, the under bump metallization comprising an area for receiving solder;
wherein the pad metallization is structured to form mesas and recesses among the mesas that reveal parts of a surface of the substrate within the lateral extent of the pad metallization, the under bump metallization being in direct contact with part of the substrate in at least one of the recesses, the under bump metallization being in direct contact across a surface of the at least one of the recesses that extends from one mesa to another mesa, the mesas forming a symmetric pattern.
2. The solderable contact of claim 1 , wherein the pad metallization below the under bump metallization is structured to form substantially parallel strips of pad metallization.
3. The solderable contact of claim 1 , wherein the under bump metallization comprises a multilayered structure, the multilayered structure comprising at least one wettable layer and a diffusion barrier layer.
4. The solderable contact of claim 3 , wherein the multilayered structure comprises an additional layer, the additional layer comprising at least one of a stress compensation layer and an adhesion-promoting layer.
5. The solderable contact of claim 3 , wherein the multilayered structure comprises at least one titanium-comprising adhesion-promoting layer, a Pt-comprising diffusion barrier layer, and a gold-comprising wettable layer.
6. The solderable contact of claim 1 , wherein a structured area of the pad metallization corresponds approximately to an area of the under bump metallization; and
wherein the pad metallization in an area other than the structured area comprises a substantially continuous and unstructured pad metallization.
7. The solderable contact of claim 1 , wherein the pad metallization comprises a layer comprised of aluminum or an aluminum-containing alloy, or a multilayered structure comprising a layer comprised of aluminum or an aluminum-containing alloy together with an additional layer.
8. The solderable contact of claim 1 , further comprising:
a layer below the pad metallization, the layer comprising a titanium-comprising adhesion-promoting layer.
9. The solderable contact of claim 1 , wherein the under bump metallization comprises a multilayered structure, the multilayered structure comprising at least one wettable layer.
10. The solderable contact of claim 9 , wherein the multilayered structure comprises an additional layer, the additional layer comprising at least one of a stress compensation layer and an adhesion-promoting layer.
11. The solderable contact of claim 10 , wherein the multilayered structure comprises at least one titanium-comprising adhesion-promoting layer, a Pt-comprising diffusion barrier layer, and a gold-comprising wettable layer.
12. The solderable contact of claim 11 , wherein a structured area of the pad metallization corresponds approximately to an area of the under bump metallization; and
wherein the pad metallization in an area other than the structured area comprises a substantially continuous and unstructured pad metallization.
13. The solderable contact of claim 12 , wherein the pad metallization comprises a layer comprised of aluminum or an aluminum-containing alloy, or a multilayered structure comprising a layer comprised of aluminum or an aluminum-containing alloy together with an additional layer.
14. The solderable contact of claim 13 , further comprising:
a layer below the pad metallization, the layer below the pad metallization comprising a titanium-comprising adhesion-promoting layer.
15. An apparatus comprising:
a solderable contact comprising:
a pad metallization on a substrate, the pad metallization having a lateral extent; and
an under bump metallization over at least part of the pad metallization, the under bump metallization comprising an area for receiving solder;
wherein the pad metallization is structured to produce mesas and recesses among the mesas that reveal parts of a surface of the substrate within the lateral extent of the pad metallization, the under bump metallization being in direct contact with part of the substrate in at least one of the recesses, the under bump metallization being in direct contact across a surface of the at least one of the recesses that extends from one mesa to another mesa, the mesas forming a symmetric pattern; and
a surface acoustic wave component that is connected to the solderable contact.
16. The apparatus of claim 15 , wherein the pad metallization comprises a layer comprised of aluminum or an aluminum-containing alloy, or a multilayered structure comprising a layer comprised of aluminum or an aluminum-containing alloy together with an additional layer.
17. The apparatus of claim 15 , wherein the pad metallization below the under bump metallization is structured to form substantially parallel strips of pad metallization.