Semiconductor device
View Patent ↗A MOS image sensor IC has a silicon substrate, a MOS transistor and photodiodes disposed on the silicon substrate, and pixel regions each comprising one of the photodiodes. A protective film is disposed around the pixel regions. A first conductor for potential fixation is disposed under the protective film and surrounds the pixel regions. The first conductor is electrically fixed to a potential of the silicon substrate.
1. A MOS image sensor IC, comprising:
a silicon substrate;
a MOS transistor and a plurality of photodiodes disposed on the silicon substrate;
a plurality of pixel regions each comprising a photodiode of the plurality of photodiodes;
a protective film disposed around the plurality of pixel regions; and
a first conductor for potential fixation disposed under the protective film and surrounding the plurality of pixel regions, the first conductor being electrically fixed to a potential of the silicon substrate.
2. A MOS image sensor IC according to claim 1 ; further comprising a plurality of second conductors for potential fixation disposed under the protective film in each pixel region, each of the second conductors having a narrow shape so as not to block incident light to the corresponding pixel region and being electrically fixed to the potential of the silicon substrate.
3. A MOS image sensor IC according to claim 1 ; wherein the first conductor is made of aluminum.
4. A MOS image sensor IC according to claim 2 ; wherein the second conductors are made of aluminum.
5. A MOS image sensor IC according to claim 2 ; wherein each of the second conductors is cross-shaped.
6. A MOS image sensor IC according to claim 2 ; wherein each of the second conductors comprises a plurality of conductor strips.
7. A MOS image sensor IC according to claim 6 ; wherein the plurality of conductor strips form a polygon shape.
8. A MOS image sensor IC comprising:
a silicon substrate;
a MOS transistor and a plurality of photodiodes disposed on the silicon substrate;
a plurality of pixel regions each comprising a photodiode of the plurality of photodiodes;
a protective film disposed around the plurality of pixel regions;
a first conductor for potential fixation disposed under the protective film and surrounding the plurality of pixel regions, the first conductor being electrically fixed to a potential of the silicon substrate; and
a plurality of second conductors for potential fixation disposed under the protective film in each pixel region, each of the second conductors having a narrow shape so as not to block incident light to the corresponding pixel region.
9. A MOS image sensor IC according to claim 8 ; wherein each of the second conductors is cross-shaped.
10. A MOS image sensor IC according to claim 8 ; wherein each of the second conductors comprises a plurality of conductor strips.
11. A MOS image sensor IC according to claim 10 ; wherein the plurality of conductor strips form a polygon shape.
12. A MOS image sensor IC according to claim 8 ; wherein the second conductors are made of aluminum.
13. A MOS image sensor IC according to claim 8 ; wherein the first conductor is made of aluminum.