IPS LCD having a first common electrode directly extending from the common line and a second common electrode contacts the common line only through a contact hole of the gate insulating layer

1. An array substrate for an in-plane switching mode liquid crystal display device, comprising:

a gate line on a substrate;

a gate insulating layer on the gate line;

a data line crossing the gate line to define a pixel region on the substrate;

a common line substantially parallel to and spaced apart from the gate line;

a gate electrode connected to the gate line, wherein the gate electrode protrudes from the gate line;

a semiconductor layer disposed over the gate electrode, wherein an area of the semiconductor layer is less than an area of the gate electrode;

a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode, the source and drain electrodes disposed on the semiconductor layer;

a plurality of pixel electrodes integrated with the drain electrode and extending from the drain electrode in the pixel region; and

a plurality of common electrodes connected to the common line and alternately arranged with the plurality of pixel electrodes,

wherein each of the source electrode, the drain electrode, the data line and the plurality of pixel electrodes are comprised from a first conductive material layer and a second conductive material layer,

wherein the second conductive material layer is disposed on the first conductive material layer,

wherein the plurality of common electrodes includes a first common electrode directly extending from the common line and a second common electrode and which is directly on the gate insulating layer, directly contacts the gate insulating layer, and contacts the common line only through a contact hole of the gate insulating layer,

wherein the first common electrode has a straight line shape,

wherein the first common electrode is spaced apart from the data line and does not overlap the data line and the plurality of pixel electrodes,

wherein the data line directly contacts the gate insulating layer therebelow, and

wherein the first conductive material layer is made of an opaque metallic material, and the second conductive material layer is made of a transparent conductive material.

2. The array substrate according to claim 1 , wherein the second common electrode is comprised from the first and second conductive material layers.

3. The array substrate according to claim 1 , wherein a portion of the first common electrode functions as a first capacitor electrode, further wherein a second capacitor electrode extends from the drain electrode and overlaps with the first capacitor electrode.

4. The array substrate according to claim 3 , further comprising a gate insulating layer between the first capacitor electrode and the second capacitor electrode, wherein the first capacitor electrode, the second capacitor electrode and the gate insulating layer function as a storage capacitor.

5. The array substrate according to claim 1 , further comprising:

a gate pad disposed at one end of the gate line; and

a data pad disposed at one end of the data line.

6. The array substrate according to claim 5 , further comprising a gate pad terminal on the gate pad, the gate pad terminal comprised from the first and second conductive material layers.

7. The array substrate according to claim 6 , further comprising a passivation layer on the gate pad terminal and the data pad, the passivation layer including an opening exposing the gate pad terminal and including an opening exposing the data pad.

8. The array substrate according to claim 7 , wherein the plurality of common electrodes are formed of the same material and on the same layer as the gate electrode.

9. The array substrate according to claim 8 , wherein a gate insulating layer between the first capacitor electrode and the second capacitor electrode, wherein the first capacitor electrode, the second capacitor electrode and the gate insulating layer function as a storage capacitor.

10. The array substrate according to claim 1 , wherein the first conductive material layer includes at least one of molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu) and aluminum neodymium (AlNd).

11. The array substrate according to claim 1 , wherein the second conductive material layer includes one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).

12. The array substrate according to claim 1 , wherein the semiconductor layer includes an active layer of an intrinsic amorphous silicon and an ohmic contact layer of an impurity-doped amorphous silicon on the active layer.

13. The array substrate according to claim 1 , wherein the first common electrode is disposed at boundary portions of the pixel region and the second common electrode is disposed at a central portion of the pixel region.