Liquid crystal display of horizontal electric field applying type and fabricating method thereof

1. A method for fabricating a liquid crystal display of horizontal electric field applying type, which includes:

preparing a thin film transistor array substrate, wherein the thin film transistor array substrate includes a thin film transistor formed on a crossing of a gate line and a data line, a pixel electrode connected to the thin film transistor, a common electrode producing horizontal electric field along with the pixel electrode, a common line connected to the common electrode, a gate pad formed with at least one conductive layer of the gate line, a data pad formed with at least one conductive layer of the data line, and a common pad formed with at least one conductive layer of the common line;

preparing a color filter array substrate to be opposite to the thin film transistor array substrate;

combining the thin film array substrate and the color filter array substrate; and

directly connecting a conductive film to the gate pad, the data pad and the common pad,

wherein the step of preparing a thin film transistor array substrate includes:

forming a first metal layer on a substrate;

forming a first conductive pattern group having the gate line, a gate electrode of the thin film transistor, the common line parallel to the gate line, the common electrode, the gate pad and the common pad, by patterning the first metal layer;

forming a gate insulating film on the substrate having the first conductive pattern group thereon;

forming a semiconductor layer and a second metal layer on the gate insulating film;

forming a semiconductor pattern group including an active layer having a channel of the thin film transistor and an ohmic contact layer between source and drain electrodes of the thin film transistor and the active layer, and a second conductive pattern group including the data line, a source electrode of the thin film transistor connected to the data line, a drain electrode of the thin film transistor being opposite to the source electrode, a pixel electrode connected to the drain electrode and paralleled to the common electrode and the data pad, by patterning semiconductor layer and the second metal layer; and

forming a passivation film on the gate insulation film having the second conductive pattern group and the semiconductor pattern group formed thereon.

2. The method of claim 1 , wherein any one of the first and the second metal layers is formed to have a double-layer structure having a main conductive layer and a subsidiary conductive layer for providing against the opening of the main conductive layer.

3. The method of claim 2 , wherein the step of forming the passivation film includes forming a contact hole passing through the passivation film and the gate insulation film to expose the subsidiary conductive layers of the gate pad and the common pad.

4. The method of claim 2 , wherein the step of forming the passivation film includes forming a contact hole passing through the passivation film, the gate insulation film and the main conductive layers of the gate pad and the common pad to expose the subsidiary conductive layers of the gate pad and the common pad.

5. The method of claim 2 , wherein the step of forming the passivation film includes forming a contact hole passing through the passivation film to expose the subsidiary conductive layer of the data pad.

6. The method of claim 2 , wherein the step of forming the passivation film includes forming a contact hole passing through the passivation film and the main layer to expose a subsidiary layer of the data pad.

7. The method of claim 2 , wherein the main layer includes at least one of an aluminum system metal, a copper, a molybdenum, a chrome and a tungsten which are a low resistance metal, and wherein the subsidiary layer includes a titanium.

8. The method of claim 1 , wherein the second conductive pattern group further includes an upper storage electrode overlapped with the common line with the gate insulating film therebetween.

9. The method of claim 1 , wherein the step of preparing the thin film transistor array substrate further includes:

preparing the substrate; and

forming an etching preventive layer on the substrate.

10. The method of claim 9 , wherein the etching preventive layer includes a transparent oxide system material.

11. The method of claim 10 , wherein the etching preventive layer includes any one of TiO 2 and Al 2 O 3 .

12. A method for fabricating a liquid crystal display of horizontal electric field applying type, which includes:

preparing a thin film transistor array substrate, wherein the thin film transistor array substrate includes a thin film transistor formed on a crossing of a gate line and a data line, a pixel electrode connected to the thin film transistor, a common electrode producing horizontal electric field along with the pixel electrode, a common line connected to the common electrode, a gate pad formed with at least one conductive layer of the gate line, a datapad formed with at least one conductive layer of the data line, and a common pad formed with at least one conductive layer of the common line;

preparing a color filter array substrate to be opposite to the thin film transistor array substrate;

combining the thin film array substrate and the color filter array substrate; and

directly connecting a conductive film to the gate pad, the data pad and the common pad,

wherein said step of preparing the thin film transistor array substrate includes:

forming a first metal layer on a substrate;

forming a first conductive pattern group having the gate line, a gate electrode of the thin film transistor connected to the gate line, the common line parallel to the gate line, the common electrode, the gate pad and the common pad, by patterning the first metal layer;

forming a semiconductor layer and a second metal layer on the gate insulating film;

forming a gate insulating film on the substrate having the first conductive pattern group thereon;

forming a semiconductor pattern group including an active layer having a channel of the thin film transistor and an ohmic contact layer between drain electrodes of the thin film transistor and the active layer, and a second conductive pattern group including the data line, a source electrode of the thin film transistor connected to the data line, a drain electrode of the thin film transistor opposite to the source electrode, a pixel electrode formed with at least one conductive layer of the drain electrode and having a finger part to form a horizontal electric field along with the common electrode, and the data pad, by patterning semiconductor layer and the second metal layer;

forming a passivation film on the gate insulating film so as to cover the semiconductor layer and the second conductive pattern group; and

patterning the semiconductor layer so that the finger part of the pixel electrode is formed to have a width identical to that of the pixel electrode.

13. The method of claim 12 ,

wherein the second conductive pattern groups is formed to have a double-layer structure having a main conductive layer and a subsidiary conductive layer for providing against the opening of the main conductive layer,

wherein the step of forming the passivation film includes:

forming a contact hole passing through the passivation film to expose the subsidiary conductive layer of the data pad, and

forming a through hole passing through the passivation film and the gate insulating film around the pixel electrode to expose the subsidiary conductive layer of the pixel electrode and the semiconductor layer of the pixel electrode having greater width than that of the subsidiary conductive layer of the pixel electrode.

14. The method of claim 2 , wherein the step of forming the passivation film includes:

forming a contact hole passing through the passivation film and the main conductive layer to expose the subsidiary conductive layer of the data pad, and

forming a through hole passing through the passivation film, the gate insulating film and the main conductive layer around the pixel electrode to expose the subsidiary conductive layer of the pixel electrode and the semiconductor layer of the pixel electrode having greater width than that of the subsidiary conductive layer of the pixel electrode.

15. The method of claim 12 , wherein the step of forming the semiconductor pattern group and the second conductive pattern group includes dry-etching the semiconductor layer the pixel electrode as the mask.