Pixel driving circuit with ground terminal voltage controller for an electro-luminance display device

1. An organic electro-luminance display device comprising:

a plurality of gate lines and a plurality of data lines that cross to define a plurality of pixels and a plurality of power lines to apply signal to the pixels;

a data driving unit for supplying a plurality of data signals to the data lines, respectively;

an emitting unit at each pixel that emits light;

a first thin film transistor at said each pixel, the first thin film transistor being turned on by a gate signal on one of the gate lines;

a second thin film transistor at said each pixel, the second thin film transistor being turned on to apply a signal to the emitting unit from one of the power lines when the first thin film transistor is turned on; and

a ground terminal voltage controlling unit that controls a first ground terminal voltage Vss_IC and a second ground terminal voltage Vss_EL,

wherein the data driving unit is supplied with the first ground terminal voltage Vss_IC from the ground terminal voltage controlling unit and outputs the data signal to the data line in accordance with the first ground terminal voltage Vss_IC which is a reference voltage determined in the ground terminal voltage controlling unit, and the emitting unit is supplied with the second ground terminal voltage Vss_EL from the ground terminal voltage controlling unit and emits light with a brightness determined by a voltage of the data signal with respect to the second ground terminal voltage Vss_EL, and

wherein the second ground terminal voltage Vss_EL is higher than the first ground terminal voltage Vss_IC, Vss_EL=Vss_IC+Va, the second ground terminal voltage controls a gate-source voltage Vgs of the second thin film transistor, and the gate-source voltage Vgs is lowered by Va than a gate-source voltage controlled by the first ground terminal voltage Vss_IC, where Va is a positive voltage.

2. The device of claim 1 , further comprising:

a storage capacitor between the gate and the drain of the second thin film transistor in said each pixel.

3. The device of claim 1 , wherein at least one of the first and second thin film transistors includes N-MOS thin film transistor.

4. The device of claim 3 , wherein the second thin film transistor comprising:

a substrate;

a semiconductor on the substrate;

a gate insulating layer on the semiconductor;

a gate electrode on the semiconductor;

an interlayer on the gate electrode; and

a source electrode and a drain electrode on the interlayer.

5. The device of claim 4 , wherein the second thin film transistor further including a passivation layer over the substrate to cover the second thin film transistor.

6. The device of claim 1 , wherein the emitting unit comprising:

an anode on the passivation;

an emitting layer on the anode; and

a cathode on the emitting layer.

7. The device of claim 6 , wherein the anode is connected to the source/drain electrodes of the second thin film transistor through a contact hole in the passivation.

8. The device of claim 6 , wherein the anode is made of indium tin oxide.

9. The device of claim 6 , wherein the cathode is made of a metal having a low work function.