Organic light emitting display device with partition wall having first and second tapered structures
View Patent ↗An organic light emitting display device (OLED) includes a transparent substrate a first electrode formed on the transparent substrate a partition wall including first and second tapered structures having different tapers and formed on the first electrode, and an organic light emitting layer stacked on both sides of the first electrode below a level of the partition wall and a second electrode. The OLED device is manufactured by, for example, forming a first electrode on a transparent substrate, forming a partition wall having first and second tapered structures on the first electrode, and forming an organic light emitting layer and a second electrode, sequentially, on both sides of the first electrode below a level of the partition wall.
1. An organic light emitting display device (OLED), comprising:
a transparent substrate;
a first electrode on the transparent substrate;
a partition wall on the first electrode, the partition wall including a first silicon nitride film pattern and a second silicon nitride film pattern, and the second silicon nitride film pattern is thicker than the first silicon nitride film pattern, wherein the first silicon nitride film pattern has a forwardly-tapered shape, and the second silicon nitride film pattern has an inversely-tapered shape, and the first silicon nitride film pattern and the second silicon nitride film pattern have different composition ratios between their silicon and nitrogen contents from each other, and wherein the first silicon nitride film pattern and the second nitride film pattern are formed simultaneously;
an organic light emitting layer stacked on both sides of the first electrode below a level of the partition wall; and
a second electrode on the organic emitting layer,
wherein the first silicon nitride film pattern is formed by the forwardly-tapered shape to form the organic light emitting layer adjacent to the partition wall in a uniform thickness, and the second silicon nitride film pattern is formed by the inversely-tapered shape to separate the second electrode,
wherein the first silicon nitride film pattern having the forwardly-tapered shape and the second silicon nitride film pattern having the inversely-tapered shape have substantially equal widths where they contact each other at an interface; and ends of the organic emitting layer are located on slanted portions of the forwardly-tapered shape of the first silicon nitride film pattern.
2. An organic light emitting display device (OLED) comprising:
a transparent substrate;
a first electrode on the transparent substrate;
a partition wall on the first electrode, the partition wall having a double-layered structure with first and second silicon nitride films, wherein the second silicon nitride film is thicker than the first silicon nitride film, and the first and second silicon nitride films have different composition ratios between their silicon and nitrogen contents from each other, and wherein the partition wall having a double film structure is composed of the first silicon nitride film having a forwardly-tapered shape and the second silicon nitride film having an inversely-tapered shape, and wherein the first silicon nitride film and the second nitride film are formed simultaneously; and
an organic light emitting layer and a second electrode, which are formed on both sides of the first electrode below a level of the partition wall,
wherein the first silicon nitride film is formed by the forwardly-tapered shape to form the organic light emitting layer adjacent to the partition wall in a uniform thickness, and the second silicon nitride film is formed by the inversely-tapered shape to separate the second electrode,
wherein the first silicon nitride film pattern having the forwardly-tapered shape and the second silicon nitride film pattern having the inversely-tapered shape have substantially equal widths where they contact each other at an interface; and ends of the organic light emitting layer are located on slanted portions of the forwardly-tapered shape of the first silicon nitride film.