Power amplifier
View Patent ↗A power amplifier amplifies an input signal having a fundamental frequency of which band width ranges between a first fundamental frequency F 1 and a second fundamental frequency F 2 . The power amplifier includes a power amplifier transistor for amplifying the input signal and an output matching circuit for suppressing a harmonic component included in an output signal from the power amplifier transistor. The output matching circuit includes: a first second-order harmonic series resonant circuit including a first inductor and a first capacitor and having a frequency twice as large as F 1 as a resonance frequency; and a second second-order harmonic series resonant circuit including a second inductor and a second capacitor and having a frequency twice as large as F 2 as a resonance frequency.
1. A power amplifier for amplifying an input signal having a fundamental frequency of which band width ranges between a first fundamental frequency F 1 and a second fundamental frequency F 2 , comprising:
a power amplifier transistor for amplifying the input signal; and
an output matching circuit for suppressing a harmonic component included in an output signal from the power amplifier transistor,
wherein the output matching circuit includes:
a first series resonant circuit including a first inductor and a first capacitor, which are connected in series to each other between an output end of the power amplifier transistor and a ground, and having a second-order harmonic frequency of the first fundamental frequency F 1 as a resonance frequency thereof; and
a second series resonant circuit including a second inductor and a second capacitor, which are connected in series to each other between the output end of the power amplifier transistor and the ground, and having a second-order harmonic frequency of the second fundamental frequency F 2 as a resonance frequency thereof,
the first inductor has an inductance of 1 nH or larger, and
the second inductor has an inductance of 1 nH or lower.
2. The power amplifier of claim 1 , wherein the second inductor is composed of a microstrip line.
3. The power amplifier of claim 1 ,
wherein the first capacitor is integrated on a semiconductor substrate on which the power amplifier transistor is integrated, and
the second capacitor is a chip component.
4. The power amplifier of claim 1 ,
wherein the first capacitor is integrated on a semiconductor substrate on which the power amplifier transistor is integrated, and
the second capacitor is integrated on another semiconductor substrate different from the semiconductor substrate on which the power amplifier transistor is integrated.
5. The power amplifier of claim 1 , wherein the band width is 50 MHz or larger.
6. The power amplifier of claim 1 , wherein the second inductor is arranged between the output end of the power amplifier transistor and a predetermined branch point on a bias line connected to the output end and supplying power to the power amplifier transistor.
7. The power amplifier of claim 6 , wherein the second capacitor is connected at one end thereof to a line branching from the bias line at the predetermined branch point and is connected at another end thereof to the ground.
8. The power amplifier of claim 6 , further comprising:
a bypass capacitor having a capacitance of 1000 pF or larger and connected to a voltage source connection part of the bias line, and
a part of the bias line which ranges from the bypass capacitor to the predetermined branch point has an inductance corresponding to an electric length in a range between λ/16 and λ/8, both inclusive, wherein λ represents a wavelength of the input signal.