Electrostatic discharge protection element comprising top gate thin film transistors with an auxiliary electrode between an organic insulating layer and a gate electrode
View Patent ↗An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
1. An electrostatic discharge protection element comprising:
a first thin film transistor (TFT), a second TFT, a third TFT each having a gate electrode, a source electrode and a drain electrode;
wherein the drain electrode of the first TFT and the gate electrode of the third TFT are electrically connected and the source electrode of the second TFT and the gate electrode of the third TFT are electrically connected;
wherein the gate electrode and the source electrode of the first TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second TFT are electrically connected to a second array line;
wherein the source electrode of the third TFT is electrically connected to the first array line and the drain electrode of the third TFT is electrically connected to the second array line; and
wherein each TFT comprises an organic semiconductor layer disposed between the source electrode and drain electrode,
wherein each TFT further comprises an organic insulating layer separating the organic semiconductor layer from the gate electrode and a light blocking layer underlying the organic semiconductor layer and separated therefrom by a buffer layer,
wherein each TFT further comprises an auxiliary electrode between the organic insulating layer and the gate electrode,
wherein each TFT further comprises a passivation layer on the auxiliary electrode,
wherein the organic semiconductor layer comprises one of copper phthalocyanine, polythiophene, polyaniline, polyacetylene, polypyrrole, polyphenylene vinylene, or derivatives thereof,
wherein the auxiliary electrode comprises one of gold (Au), silver (Ag), aluminum (Al), nickel (Ni), chrome (Cr), or molybdenum (Mo),
wherein the light blocking layer comprises one of chrome oxide (CrOx) having an optical density of 3.5 or above,
wherein the source and drain electrodes and the gate electrodes comprise one of gold (Au), silver (Ag), nickel (Ni), chrome (Cr), or molybdenum (Mo),
wherein the organic semiconductor layer and the organic gate insulating layer are disposed on the source/drain electrodes and the gate electrode is disposed on the organic gate insulating layer,
wherein the passivation layer has a contact hole exposing the auxiliary electrode,
wherein the gate electrode is disposed on the passivation layer and is electrically connected to the auxiliary electrode through the contact hole.
2. The electrostatic discharge protection element of claim 1 , wherein the first array line comprises a data line or a gate line and the second array line comprises a common voltage line.