GaTe semiconductor for radiation detection
View Patent ↗GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
1. A gamma radiation detector comprising a single crystal of GaTe semiconductor as a medium to detect a high-energy ionization event.
2. The detector of claim 1 , further comprising a plurality of electrodes deposited on said GaTe semiconductor, wherein when a voltage is applied across said electrodes and a gamma photon generates carriers in said GaTe semiconductor, a measurable current will be produced.
3. The detector of claim 2 , wherein said GaTe semiconductor comprises a c axis that is oriented perpendicular to the direction of said voltage.
4. The detector of claim 2 , wherein said voltage is within a range from 100-10,000 V/cm.
5. The detector of claim 2 , wherein said electrodes exhibit Schottky or Ohmic behavior.
6. The detector of claim 2 , wherein at least one electrode of said electrodes comprise indium.
7. The detector of claim 1 , wherein said GaTe semiconductor has a dimension of 0.1-10 cm.
8. The detector of claim 1 , wherein said GaTe semiconductor is grown by crystal growth method selected from the group consisting of physical vapor transport, chemical vapor transport, Czochralski technique, vertical Bridgman technique and horizontal Bridgman technique.
9. The detector of claim 1 , wherein said GaTe semiconductor is grown with a Te excess.
10. The detector of claim 1 , wherein said GaTe semiconductor is grown with at least one dopant.
11. The detector of claim 1 , wherein said GaTe semiconductor is grown with a Te excess and with at least one dopant.
12. The detector of claim 1 , wherein said semiconductor exhibits a resistivity of >10 8 Ω cm.
13. The detector of claim 1 , wherein said GaTe semiconductor comprises selenium.
14. A gamma photon detector, comprising:
a single crystal of GaTe;
a first metal contact in operative contact with said single crystal of GaTe;
a second metal contact in operative contact with said single crystal of GaTe; and
means for applying a voltage across said single crystal of GaTe wherein when a gamma photon generates carriers in said single crystal of GaTe, a measurable current will be produced.
15. The detector of claim 14 , further comprising means for measuring and characterizing said current.
16. The detector of claim 14 , wherein said single crystal of GaTe comprises a c axis that is oriented perpendicular to the direction of said voltage.
17. The detector of claim 14 , wherein said voltage is within a range from 100-10,000 V/cm.
18. The detector of claim 14 , wherein said single crystal of GaTe has a dimension of 0.1-10 cm.
19. The detector of claim 14 , wherein said single crystal of GaTe is grown by a crystal growth method selected from the group consisting of physical vapor transport, chemical vapor transport, Czochralski technique, vertical Bridgman technique and horizontal Bridgman technique.
20. The detector of claim 14 , wherein said single crystal of GaTe is grown with a configuration selected from the group consisting of (i) with a Te excess, (ii) with at least one dopant and (iii) with a Te excess and with at least one a dopant.
21. The detector of claim 14 , wherein at least one of said first metal contact or said second metal contact exhibits Schottky or Ohmic behavior.
22. The detector of claim 14 , wherein said single crystal exhibits a resistivity of >10 8 Ω cm.
23. The detector of claim 14 , wherein at least one of said first metal contact or said second metal contact comprises indium.
24. The detector of claim 14 , wherein said single crystal of GaTe comprises selenium.
25. A method for detecting gamma photons, comprising:
providing a single crystal of GaTe with a first metal contact and a second metal contact in contact with said single crystal of GaTe; and
applying a voltage across said single crystal of GaTe, wherein when a gamma photon generates carriers in said single crystal of GaTe, a measurable current will be produced; and
measuring said current.
26. The method of claim 25 , wherein said single crystal of GaTe comprises a c axis that is oriented perpendicular to the direction of said voltage.
27. The method of claim 25 , wherein said voltage is within a range from 100-10,000 V/cm.
28. The method of claim 25 , wherein said single crystal of GaTe has a dimension of 0.1-10 cm.
29. The method of claim 25 , wherein said single crystal of GaTe is grown by a crystal growth method selected from the group consisting of physical vapor transport, chemical vapor transport, Czochralski technique, vertical Bridgman technique and horizontal Bridgman technique.
30. The method of claim 25 , wherein said single crystal of GaTe is grown with a configuration selected from the group consisting of (i) with a Te excess, (ii) with at least one dopant and (iii) with a Te excess and with at least one dopant.
31. The method of claim 25 , wherein at least one of said first metal contact or said second metal contact exhibits Schottky or Ohmic behavior.
32. The method of claim 25 , wherein said crystal exhibits a resistivity of >10 8 Ω cm.
33. The method of claim 25 , wherein at least one of said first metal contact or said second metal contact comprises indium.
34. The method of claim 25 , wherein said single crystal of GaTe comprises selenium.