Semiconductor device and method of producing the same
View Patent ↗A semiconductor device includes a semiconductor chip having a first main surface having an electrode pad in an exposed state, and an interlayer insulation layer formed on the first main surface so that the electrode pad is partially exposed; a re-distribution wiring layer including a wiring pattern having a linear portion having one end portion electrically connected to the electrode pad and extending from the electrode pad, and a post electrode mounting portion with a recessed polygonal shape and connected to the other end portion of the linear portion; a post electrode formed on the post electrode mounting portion and having a bottom surface with a contour crossing an upper contour of the post electrode mounting portion at more than two points; a sealing portion disposed so that a top of the post electrode is exposed; and an outer terminal formed on the top of the post electrode.
1. A semiconductor device comprising:
a semiconductor chip having a first main surface with an electrode pad in an exposed state and an interlayer insulation layer formed on the first main surface so that the electrode pad is partially exposed;
a re-distribution wiring layer including a wiring pattern, said wiring pattern having a linear portion having one end portion electrically connected to the electrode pad and extending from the electrode pad, and a post electrode mounting portion with a recessed polygonal shape in a plan view relative to the first main surface and connected to another end portion of the linear portion;
a post electrode formed on the post electrode mounting portion and having a bottom surface, said bottom surface having a contour crossing an upper contour of the post electrode mounting portion at at least two points;
a sealing portion disposed so that a top of the post electrode is exposed; and
an outer terminal formed on the top of the post electrode,
wherein the recessed polygonal shape is a six-corner star.
2. The semiconductor device of claim 1 , wherein the six-corner star has six acute angle corners.
3. The semiconductor device of claim 1 , wherein the upper contour crosses a contour of the bottom surface at more than eleven points.
4. A semiconductor device comprising:
a semiconductor chip having a main surface with an electrode pad in an exposed state and an interlayer insulation layer formed on the main surface so that the electrode pad is partially exposed;
a re-distribution wiring layer having a wiring pattern that includes
a linear portion having one end portion electrically connected to the electrode pad and,
a post electrode mounting portion connected to another end portion of the linear portion, having with a recessed star shape, in a plan view relative to the main surface, and an upper contour; and
a post electrode formed on the post electrode mounting portion and having a bottom surface with a contour that crosses the upper contour of the post electrode mounting portion at at least twelve points.