Method of producing large area SiC substrates
View Patent ↗A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
1. A method for producing an SiC-containing film deposited on an Si substrate, said method comprising:
etching a Si substrate to remove any native oxide;
carbonizing said Si substrate after said etching;
epitaxially growing a first film on said Si substrate at temperatures below 1000° C., wherein said first film is a SiC (x) AlN (1-x) film, where 0<x<1; and
epitaxially growing a second film on said SiC (x) AlN (1-x) film, wherein said second film is a GaN film.
2. The method of claim 1 , wherein said first film is deposited on said Si substrate using radio-frequency (RF) plasma.
3. The method of claim 2 , wherein said RF plasma uses argon as a plasma gas and a growth temperature of about 850° C.
4. The method of claim 1 , wherein said first film is deposited on said Si substrate using direct-current (DC) plasma.
5. The method of claim 1 , wherein said first film is deposited on said Si substrate using chemical vapor deposition (CVD).
6. The method of claim 5 , wherein said CVD is low temperature reactive CVD.
7. The method of claim 1 , wherein said first film is deposited on said Si substrate using reactive atomic layer deposition (RALD).
8. The method of claim 7 , wherein said RALD is performed in the presence of a low temperature SiC precursor.
9. The method of claim 8 , wherein said low temperature SiC precursor is hexanethyldisilane (HMDS).
10. The method of claim 1 , wherein said Si substrate is a Si (111) substrate.
11. The method of claim 1 , wherein said Si substrate is a semi-insulating Si substrate.
12. The SiC-containing film produced by the method of claim 1 .
13. An electronic device comprising the SiC-containing film of claim 12 .
14. The electronic device of claim 13 , wherein the electronic device is a diode.