Liquid crystal display device and method of fabricating the same

1. A liquid crystal display device, comprising:

first and second substrates;

a gate line on the first substrate;

a data line crossing the gate line to define a pixel region;

a thin film transistor (TFT) near the crossing of the gate and data lines, the TFT having a gate electrode, a source electrode and a drain electrode;

a pixel electrode in the pixel region, the pixel electrode having a double-layer structure in which a metal layer is formed on a transparent conductive layer;

a black matrix on the second substrate, the black matrix having an aperture portion partially overlapping the pixel electrode and the drain electrode; and

a liquid crystal layer between the first and second substrates, wherein the gate line and the gate electrode connected to the gate line have the double-layer structure.

2. The device of claim 1 , further comprising a storage line being parallel to the gate line.

3. The device of claim 2 , wherein the storage line has the double-layer structure.

4. The device of claim 2 , wherein the drain electrode is formed along the storage line and is adjacent to both sides of the data line.

5. The device of claim 2 , wherein the drain electrode surrounds one portion of the pixel electrode adjacent to the storage line.

6. The device of claim 5 , wherein the drain electrode overlaps the aperture portion of the black matrix and an overlapped portion between the storage line and the pixel electrode.

7. The device of claim 6 , wherein a portion of the drain electrode overlapping the aperture portion of the black matrix reflects light.

8. The device of claim 1 , further comprising an insulating film between the gate line and the data line.

9. The device of claim 8 , wherein the pixel electrode is exposed via a transmission hole passing through the insulating film.

10. The device of claim 9 , wherein the metal layer of the pixel electrode surrounds a periphery of the transmission hole.

11. The device of claim 1 , further comprising a first active layer between the source electrode and the drain electrode.

12. The device of claim 11 , further comprising a first storage capacitor overlapping between a second active layer extended from the first active layer and the storage line.

13. The device of claim 12 , further comprising a second storage capacitor overlapping between the drain electrode and the storage line.

14. The device of claim 1 , wherein the black matrix further includes a bridge crossing the aperture portion.