Manufacturing method of semiconductor device and semiconductor device
View Patent ↗A manufacturing method of a semiconductor device disclosed herein, comprises: forming a first member to be patterned on a semiconductor substrate; forming a second member to be patterned on the first member; forming a third member to be patterned on the second member; patterning the third member to form a first line pattern and a first connecting portion in the third member, the first line pattern having a plurality of parallel linear patterns and the first connecting portion connecting the linear patterns on at least one end side of the linear patterns of the first line pattern; etching the second member with the third member as a mask to form a second line pattern and a second connecting portion in the second member, the second line pattern being the same pattern as the first line pattern and the second connecting portion being the same pattern as the first connecting portion; removing the second connecting portion of the second member; and etching the first member with the second member as a mask.
1. A manufacturing method of a semiconductor device, comprising:
forming a first member to be patterned on a semiconductor substrate;
forming a second member to be patterned on the first member;
forming a third member to be patterned on the second member;
patterning the third member to form a first line pattern and a first connecting portion in the third member, the first line pattern having a plurality of parallel linear patterns and the first connecting portion connecting the linear patterns on at least one end side of the linear patterns of the first line pattern;
etching the second member with the third member as a mask to form a second line pattern and a second connecting portion in the second member, the second line pattern being the same pattern as the first line pattern and the second connecting portion being the same pattern as the first connecting portion;
removing the second connecting portion of the second member; and
etching the first member with the second member as a mask.
2. The manufacturing method of the semiconductor device according to claim 1 , further comprising removing the third member after said etching the second member.
3. The manufacturing method of the semiconductor device according to claim 2 , wherein said removing the second connecting portion comprises:
forming a fourth member to be patterned on the second member after said removing the third member;
forming an opening in the fourth member, the opening containing the second connecting portion; and
etching the second member with the fourth member as a mask.
4. The manufacturing method of the semiconductor device according to claim 1 , wherein a part of the linear patterns of the second line pattern of the second member is also removed in said removing the second connecting portion.
5. The manufacturing method of the semiconductor device according to claim 1 , wherein the third member is a photoresist.
6. The manufacturing method of the semiconductor device according to claim 1 , wherein the second member is formed of an insulating material to be used as a mask.
7. The manufacturing method of the semiconductor device according to claim 1 , wherein the first member is formed of a conductive material.
8. The manufacturing method of the semiconductor device according to claim 1 , wherein the first line pattern is a pattern for word lines.
9. The manufacturing method of the semiconductor device according to claim 8 , wherein the word lines are for a memory cell array in a nonvolatile semiconductor memory device.
10. The manufacturing method of the semiconductor device according to claim 1 , wherein the first line pattern is a pattern for bit lines.
11. The manufacturing method of the semiconductor device according to claim 10 , wherein the bit lines are for a memory cell array in a nonvolatile semiconductor memory device.