POLISHING COMPOSITION AND METHOD OF POLISHING WITH THE SAME

1 .- 11 . (canceled)

12 . A method of chemical mechanical polishing comprising:

bringing a polishing composition into contact with a surface including copper to be polished; and

polishing the surface by moving it relatively to a polishing surface,

wherein the polishing composition comprises:

at least one compound selected from tetrazole compounds and derivatives thereof and anthranilic acid compounds and derivatives thereof;

abrasive particles comprising associative abrasive particles; and

an oxidizing agent,

wherein the associative abrasive particles have an average major axis length in the range of 10 to 30 nm and a degree of association in the range of 1.2 to 4, and

wherein the polishing composition has a pH of 3.5 to 8.

13 . The method of claim 1 , wherein the proportion of the associative abrasive particles in the polishing composition is 10% by volume or higher based on all the abrasive particles.

14 . The method of claim 1 , wherein the proportion of the associative abrasive particles in the polishing composition is 40% by volume or higher based on all the abrasive particles.

15 . The method of claim 1 , wherein the polishing composition further comprises an acid.

16 . The method of claim 1 , wherein the polishing composition further comprises a chelating agent.

17 . The method of claim 1 , wherein the polishing composition further comprises at least one of a surfactant and a hydrophilic polymer.

18 . The method of claim 1 , wherein the polishing composition further comprises an alkali agent and buffer.