Curable organopolysiloxane composition, use of the cured product of the composition, and semiconductor device
View Patent ↗A curable organopolysiloxane composition capable of forming cured products of superior optical transmittance exhibiting little heat-induced yellowing over time. A semiconductor device having semiconductor elements encapsulated in a cured product of the composition. The composition includes (A) an organopolysiloxane having at least two silicon-bonded alkenyl groups per molecule and bearing silicon-bonded aryl groups, whose content relative to all silicon-bonded organic groups is not less than 40 mol %, (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule, and (C) an organosiloxane oligomer complex of platinum, where the oligomer has not more than eight silicon atoms per molecule and bears silicon-bonded alkenyl groups and silicon-bonded aryl groups.
1. A semiconductor device, characterized by semiconductor elements encapsulated in a cured product of a composition comprising:
(A) an organopolysiloxane having at least two silicon-bonded alkenyl groups per molecule and having silicon-bonded aryl groups,
(B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule, and
(C) an organosiloxane oligomer complex of platinum, wherein the composition is characterized by
i) content of the silicon-bonded aryl groups relative to all silicon-bonded organic groups in component (A) is not less than 40 mol %, and
ii) the organosiloxane oligomer in component (C) has
a) not more than eight silicon atoms per molecule,
b) silicon-bonded alkenyl groups, and
c) silicon-bonded aryl groups.
2. The device of claim 1 , wherein the device is selected from the group consisting of diodes, light-emitting diodes, transistors, thyristors, photocouplers, charge coupled devices, monolithic integrated circuits, hybrid integrated circuits, large scale integrated devices, and very large scale integrated devices.
3. The device of claim 1 , characterized in that the organosiloxane oligomer of component (C) is represented by general formula:
where m is an integer of 0 to 6 and each R is independently an identical or different monovalent hydrocarbon group, with the provisos that i) at least one R is an alkenyl group and ii) at least one R is an aryl group.
4. The device of claim 1 , characterized in that the organosiloxane oligomer of component (C) is represented by general formula:
where m is an integer of 0 to 6, each R 1 is independently an alkenyl group, and R 2 is independently an identical or different monovalent hydrocarbon group, with the proviso that at least one R 2 is an aryl group.
5. The device of claim 1 , characterized in that the composition has an index of refraction of visible light of not less than 1.5 and an optical transmittance of not less than 80%.
6. The device of claim 1 , characterized in that the composition has an ultra-violet transmittance of not more than 10%.
7. A semiconductor device, characterized by semiconductor elements encapsulated in a cured product of a composition comprising:
(A) an organopolysiloxane having at least two silicon-bonded alkenyl groups per molecule and having silicon-bonded aryl groups,
(B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule, and
(C) an organosiloxane oligomer complex of platinum, wherein the composition is characterized by
i) content of the silicon-bonded aryl groups relative to all silicon-bonded organic groups in component (A) is not less than 40 mol %, and
ii) the organosiloxane oligomer in component (C) is 1,3-dimethyl-1,3-diphenyl-1,3-divinyldisiloxane.
8. The device of claim 7 , wherein the device is selected from the group of diodes, light-emitting diodes, transistors, thyristors, photocouplers, charge coupled devices, monolithic integrated circuits, hybrid integrated circuits, large scale integrated devices, and very large scale integrated devices.
9. The device of claim 7 , characterized in that the composition has an index of refraction of visible light of not less than 1.5 and an optical transmittance of not less than 80%.
10. The device of claim 7 , characterized in that the composition has an ultra-violet transmittance of not more than 10%.