Thin film transistor-liquid crystal display having an insulating layer exposing portions of a gate island
View Patent ↗A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks.
1. A pixel unit of a thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:
a substrate;
a TFT formed on the substrate;
a passivation layer covering the TFT; and
a pixel electrode connected with the TFT,
wherein the TFT comprises:
a gate island formed by a gate electrode, a first insulating layer, an active layer, and an ohmic contact layer stacked sequentially on the substrate, wherein the ohmic contact layer is formed in a source region and a drain region and exposes the active layer in a channel region between the source region and drain region;
a second insulating layer, covering the gate island and forming on the gate island an opening through which the source region, the drain region and the channel region are exposed;
a source electrode and a drain electrode, formed on the second insulating layer and electrically connected with the ohmic contact layer in the source region and the drain region, respectively, and
wherein the pixel electrode is formed on the second insulating layer and is connected with the drain electrode of the TFT.
2. The pixel unit according to claim 1 , wherein the pixel electrode is integrated with the drain electrode and is connected with the ohmic contact layer in the drain region.
3. The pixel unit according to claim 2 , wherein a pixel electrode material layer is formed directly on the source electrode and is connected with the ohmic contact layer in the source region.
4. The pixel unit according to claim 2 , wherein the pixel electrode and the drain electrode which are integrated with each other are exposed from the passivation layer.
5. The pixel unit according to claim 1 , wherein the source electrode is formed on the second insulating layer via a pixel electrode material layer and is connected with the ohmic contact layer in the source region.
6. The pixel unit according to claim 5 , wherein the drain electrode is formed on the second insulating layer via the pixel electrode material layer and is connected with the ohmic contact layer in the drain region.
7. The pixel unit according to claim 5 , wherein the pixel electrode is exposed from the passivation layer.
8. The pixel unit according to claim 3 , wherein a pixel electrode material layer is formed directly on the source electrode and is connected directly with the ohmic contact layer in the source region.
9. The pixel unit according to claim 1 , wherein the passivation layer is filled in the opening on the gate island in the second insulating layer and is in contact with the channel region.
10. The pixel unit according to claim 9 , wherein the pixel electrode is integrated with the drain electrode and is connected with the ohmic contact layer in the drain region.
11. The pixel unit according to claim 10 , wherein a pixel electrode material layer is formed directly on the source electrode and is connected with the ohmic contact layer in the source region.
12. The pixel unit according to claim 11 , wherein a pixel electrode material layer is formed directly on the source electrode and is connected directly with the ohmic contact layer in the source region.
13. The pixel unit according to claim 10 , wherein the pixel electrode and the drain electrode which are integrated with each other are exposed from the passivation layer.
14. The pixel unit according to claim 9 , the source electrode is formed on the second insulating layer via a pixel electrode material layer and is connected with the ohmic contact layer in the source region.
15. The pixel unit according to claim 14 , wherein the drain electrode is formed on the second insulating layer via the pixel electrode material layer and is connected with the ohmic contact layer in the drain region.
16. The pixel unit according to claim 14 , wherein the pixel electrode is exposed from the passivation layer.