Granted Patent B2

US 7,916,373 · App. 11/836,540 · Granted Mar 29, 2011

Abstract

Claims (62)

1. A device, comprising:

a structure having a first substantially flat surface; and

a first beam attached to the first surface, wherein:

the first beam comprises first and second facets, with each of the first and second facets oriented with respect to the first surface at an angle different from about 90 degrees;

the first and second facets intersect to form a first edge;

the first beam has a thickness that changes along the first edge, said thickness being a dimension perpendicular to the first surface; and

the device is a micro-electromechanical system (MEMS) device.

2. The device of claim 1 , wherein:

the structure comprises a plate; and

the first beam is a strut adapted to reinforce the plate against deformation.

3. The device of claim 1 , wherein the first beam has a substantially octahedron shape.

4. The device of claim 1 , wherein a first cross-section of the first beam has a triangular shape.

5. The device of claim 4 , wherein a second cross-section of the first beam has a trapezoid shape.

6. The device of claim 1 , further comprising:

a second beam attached to the first surface, wherein the first and second beams intersect to form an X-shaped beam structure.

7. The device of claim 6 , wherein:

the second beam comprises third and fourth facets, with at least one of the third and fourth facets oriented with respect to the first surface at an angle different from about 90 degrees;

the third and fourth facets intersect to form a second edge; and

the second beam has a thickness that changes along the second edge, said thickness being a dimension perpendicular to the first surface.

8. The device of claim 6 , further comprising an X-shaped base attached to the X-shaped beam structure.

9. The device of claim 1 , wherein:

the structure and the first beam are part of a mirror supported on a substrate; and

the mirror is adapted to rotate with respect to the substrate about a rotation axis.

10. The device of claim 9 , wherein:

the structure comprises a plate; and

the changing thickness prevents the beam from coming into direct physical contact with the substrate due to the rotation.

11. The device of claim 9 , wherein the changing thickness causes cross-section area of the first beam to decrease as the distance between the cross-section location and the rotation axis increases.

12. A fabrication method, comprising:

forming a first trench in a first layer of a multilayered wafer, wherein:

the first layer has a substantially flat surface;

the first trench has first and second sidewalls, with at least one of the first and second sidewalls oriented with respect to the flat surface at an angle different from about 90 degrees;

the first and second sidewalls intersect to form a corresponding edge; and

the first trench has a depth that changes along said corresponding edge, said depth being a dimension perpendicular to the flat surface;

filling the first trench with material to form a first beam;

depositing additional material over the first layer and the filled trench to form a structure having a first substantially flat surface adjacent to the flat surface of the first layer, wherein the first beam is attached to the first surface; and

removing the first layer to release the structure with the first beam, wherein:

the first beam comprises first and second facets, each corresponding to a respective sidewall of the first trench, with each of the first and second facets oriented with respect to the first surface at an angle different from about 90 degrees;

the first and second facets intersect to form a first edge; and

the first beam has a thickness that changes along the first edge, said thickness being a dimension perpendicular to the first surface; and

the device is a MEMS device.

13. The method of claim 12 , wherein the first beam has a substantially octahedron shape.

14. The method of claim 12 , wherein a first cross-section of the first beam has a triangular shape.

15. The method of claim 14 , wherein a second cross-section of the first beam has a trapezoid shape.

16. The method of claim 12 , further comprising:

forming a second beam attached to the first surface, wherein the first and second beams intersect to form an X-shaped beam structure.

17. The method of claim 16 , wherein:

the second beam comprises third and fourth facets, with at least one of the third and fourth facets oriented with respect to the first surface at an angle different from about 90 degrees;

the third and fourth facets intersect to form a second edge; and

the second beam has a thickness that changes along the second edge, said thickness being a dimension perpendicular to the first surface.

18. The method of claim 16 , further comprising:

forming an X-shaped base attached to the X-shaped beam structure.

19. The method of claim 12 , further comprising forming a minor supported on a substrate, wherein:

the structure and the first beam are part of the minor;

the mirror is adapted to rotate with respect to the substrate about a rotation axis; and

the changing thickness of the first beam causes cross-section area of the first beam to decrease as the distance between the cross-section location and the rotation axis increases.

20. A MEMS device, comprising:

a structure having a first substantially flat surface; and

a first beam attached to the first surface, wherein:

the first beam comprises first and second facets, with at least one of the first and second facets oriented with respect to the first surface at an angle different from about 90 degrees;

the first and second facets intersect to form a first edge;

the first beam has a thickness that changes along the first edge, said thickness being a dimension perpendicular to the first surface; and

the first beam has a substantially octahedron shape.

Assignments (9)