Semiconductor device with a light emitting semiconductor die
View Patent ↗A semiconductor device includes a light emitting semiconductor die mounted on at least one of first and second electrically conductive bonding pads, which are located on a first major surface of a substrate of the device. The light emitting semiconductor die has an anode and a cathode, which are electrically connected to the first and second electrically conductive bonding pads. The semiconductor device further includes first and second electrically conductive connecting pads, which are located on a second major surface of the substrate. The first and second electrically conductive bonding pads are electrically connected to the first and second electrically conductive connecting pads via first and second electrically conductive interconnecting elements.
1. A semiconductor device comprising:
a substantially planar substrate having first and second major surfaces, the first and second major surfaces being opposed surfaces;
a light emitting semiconductor die comprising a top major light emitting surface and an oppositely-disposed bottom major surface, the light emitting semiconductor die having an anode and a cathode on the bottom major surface of the light emitting semiconductor die, the anode and the cathode of the light emitting semiconductor die being electrically connected to first and second electrically conductive bonding pads located on the first major surface, the semiconductor light emitting die being mounted on at least the first electrically conductive bonding pad such that one of the anode and the cathode on the bottom major surface of the light emitting semiconductor die is electrically connected to the first electrically conductive bonding pad;
first and second electrically conductive connecting pads located on the second major surface;
a first electrically conductive interconnecting element electrically connected to the first electrically conductive bonding pad and the first electrically conductive connecting pad; and
a second electrically conductive interconnecting element electrically connected to the second electrically conductive bonding pad and the second electrically conductive connecting pad,
wherein the bottom major surface of the light emitting semiconductor die is a bottom surface of a substrate of the die, each of the anode and cathode comprises a metallization layer formed on the bottom major surface of the light emitting semiconductor die.
2. The semiconductor device of claim 1 wherein at least one of the first and second electrically conductive interconnecting elements is on at least one sidewall of the substantially planar substrate and electrically interconnects one of the first and second electrically conductive bonding pads to one of the first and second electrically conductive connecting pads.
3. The semiconductor device of claim 2 wherein the first electrically conductive interconnecting element is on a sidewall of the substantially planar substrate and electrically interconnects the first electrically conductive bonding pad to the first electrically conductive connecting pad and the second electrically conductive interconnecting element is on the same sidewall or another sidewall of the substantially planar substrate and electrically interconnects the second electrically conductive bonding pad to the second electrically conductive connecting pad.
4. The semiconductor device of claim 2 wherein the at least one of the first and second electrically conductive interconnecting elements is situated within a partial cylindrical depression in the at least one sidewall of the substantially planar substrate.
5. The semiconductor device of claim 1 , wherein the light emitting semiconductor die is also mounted on the second electrically conductive bonding pad such that the anode and the cathode of the light emitting semiconductor die, are electrically connected to the first and second electrically conductive bonding pads, respectively.
6. The semiconductor device of claim 1 wherein the light emitting semiconductor die is a light emitting diode die.
7. A semiconductor device comprising:
a substantially planar substrate having first and second major surfaces, the first and second major surfaces being opposed surfaces;
first and second electrically conductive bonding pads located on the first major surface;
a light emitting semiconductor die comprising a top major light emitting surface and an oppositely-disposed bottom major surface, the light emitting semiconductor die having an anode and a cathode on the bottom major surface of the light emitting semiconductor die, the semiconductor light emitting die being mounted on the first and second electrically conductive bonding pads such that the anode of the light emitting semiconductor die is electrically connected to the first electrically conductive bonding pad and the cathode of the light emitting semiconductor die is electrically connected to the second electrically conductive bonding pad;
first and second electrically conductive connecting pads located on the second major surface;
a first electrically conductive interconnecting element electrically connected to the first electrically conductive bonding pad and the first electrically conductive connecting pad; and
a second electrically conductive interconnecting element electrically connected to the second electrically conductive bonding pad and the second electrically conductive connecting pad,
wherein the bottom major surface of the light emitting semiconductor die is a bottom surface of a substrate of the die, each of the anode and cathode comprises a metallization layer formed on the bottom major surface of the light emitting semiconductor die.
8. The semiconductor device of claim 7 wherein at least one of the first and second electrically conductive interconnecting elements is on at least one sidewall of the substantially planar substrate and electrically interconnects one of the first and second electrically conductive bonding pads to one of the first and second electrically conductive connecting pads.
9. The semiconductor device of claim 8 wherein the first electrically conductive interconnecting element is on a sidewall of the substantially planar substrate and electrically interconnects the first electrically conductive bonding pad to the first electrically conductive connecting pad and the second electrically conductive interconnecting element is on the same sidewall or another sidewall of the substantially planar substrate and electrically interconnects the second electrically conductive bonding pad to the second electrically conductive connecting pad.
10. The semiconductor device of claim 8 wherein the at least one of the first and second electrically conductive interconnecting elements is situated within a partial cylindrical depression in the at least one sidewall of the substantially planar substrate.
11. A semiconductor device comprising:
a substantially planar substrate having first and second major surfaces, the first and second major surfaces being opposed surfaces;
first and second electrically conductive bonding pads located on the first major surface;
a light emitting semiconductor die comprising a top major light emitting surface and an oppositely-disposed bottom major surface, the light emitting semiconductor die having an anode and a cathode on the bottom major surface of the light emitting semiconductor die, the anode and the cathode of the light emitting semiconductor die being electrically connected to the first and second electrically conductive bonding pads, the semiconductor light emitting die being mounted on at least the first electrically conductive bonding pad such that one of the anode and the cathode on the bottom major surface of the light emitting semiconductor die is electrically connected to the first electrically conductive bonding pad;
first and second electrically conductive connecting pads located on the second major surface;
a first electrically conductive interconnecting element electrically connected to the first electrically conductive bonding pad and the first electrically conductive connecting pad; and
a second electrically conductive interconnecting element electrically connected to the second electrically conductive bonding pad and the second electrically conductive connecting pad, wherein at least one of the first and second electrically conductive interconnecting elements is located on at least one sidewall of the substantially planar substrate,
wherein the bottom major surface of the light emitting semiconductor die is a bottom surface of a substrate of the die, each of the anode and cathode comprises a metallization layer formed on the bottom major surface of the light emitting semiconductor die.
12. The semiconductor device of claim 11 wherein the first electrically conductive interconnecting element is on a sidewall of the substantially planar substrate and electrically interconnects the first electrically conductive bonding pad to the first electrically conductive connecting pad and the second electrically conductive interconnecting element is on the same sidewall or another sidewall of the substantially planar substrate and electrically interconnects the second electrically conductive bonding pad to the second electrically conductive connecting pad.
13. The semiconductor device of claim 11 wherein the at least one of the first and second electrically conductive interconnecting elements is situated within a partial cylindrical depression in the at least one sidewall of the substantially planar substrate.
14. The semiconductor device of claim 11 , wherein the light emitting semiconductor die is also mounted on the second electrically conductive bonding pad such that the anode and the cathode of the light emitting semiconductor die are electrically connected to the first and second electrically conductive bonding pads, respectively.