Lateral conduction infrared photodetector
View Patent ↗A photodetector for detecting infrared light in a wavelength range of 3-25 μm is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In x Ga 1-x Sb with 0≦x≦0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.
1. A photodetector for detecting infrared light, comprising:
a semiconductor substrate;
a plurality of semiconductor layers epitaxially grown on the semiconductor substrate, with the plurality of semiconductor layers including a lower cladding layer, a type-II superlattice region, and an upper cladding layer;
a mesa structure formed from the plurality of semiconductor layers, with the mesa structure having a plurality of outer sidewalls, and with the mesa structure having a central portion in the center of the photodetector which is etched downward at least partway through the type-II superlattice region to form an inner sidewall of the mesa structure;
an electrically-insulating layer deposited over a top surface of the mesa structure;
a first impurity-doped region extending into the mesa structure from the inner sidewall of the mesa structure;
a second impurity-doped region extending into the mesa structure from at least one of the outer sidewalls of the mesa structure;
a first electrode deposited over the inner sidewall of the mesa structure and extending over the top surface of the mesa structure above the electrically-insulating layer; and
a second electrode deposited over the second impurity-doped region.
2. The apparatus of claim 1 wherein the semiconductor substrate comprises a gallium antimonide (GaSb) substrate, or a gallium arsenide (GaAs) substrate.
3. The apparatus of claim 1 wherein the lower cladding layer and the upper cladding layer each have a bandgap energy which is larger than the bandgap energy of the type-II superlattice region.
4. The apparatus of claim 1 wherein the type-II superlattice region comprises a not intentionally doped type-II superlattice.
5. The apparatus of claim 1 wherein the type-II superlattice region comprises a plurality of alternating layers of indium arsenide (InAs) and indium gallium antimonide (In x Ga 1-x Sb) with an indium content x in the range 0≦x≦0.5.
6. The apparatus of claim 1 wherein the inner sidewall of the mesa structure is tapered inward with distance from the top surface of the mesa structure.
7. The apparatus of claim 1 wherein the central portion of the mesa structure has a conical shape, or a pyramidal shape.
8. The apparatus of claim 1 wherein the outer sidewalls of the mesa structure are tapered outward with distance from the top surface of the mesa structure.
9. The apparatus of claim 1 wherein the first impurity-doped region and the second impurity-doped region are oppositely doped.
10. The apparatus of claim 1 wherein the second impurity-doped region extends into the mesa structure from each outer sidewall of the mesa structure.
11. The apparatus of claim 1 wherein the second electrode is in electrical contact with the semiconductor substrate.
12. A two-dimensional (2-D) array of photodetectors for detecting infrared light, comprising:
a III-V compound semiconductor substrate;
a plurality of III-V compound semiconductor layers epitaxially grown on the III-V compound semiconductor substrate including n type-II superlattice region formed from alternating layers of indium arsenide (InAs) and indium gallium antimonide (In x Ga 1-x Sb) with an indium content given by 0≦x≦0.5;
a mesa structure formed from the plurality of III-V compound semiconductor layers at the location of each photo detector in the 2-D array of photodetectors, with the mesa structure having at least one outer sidewall, and with a central portion of the mesa structure in the center of each photodetector being etched downward at least partially through the type-II superlattice region to form an inner sidewall of the mesa structure;
an electrically-insulating layer deposited over a top surface of each mesa structure;
a first impurity-doped region extending into each mesa structure from the inner sidewall thereof;
a second impurity-duped region extending into each mesa structure from the at least one outer sidewall thereof;
a first electrode deposited over the inner sidewall of each mesa structure and extending over the top surface the mesa structure above the electrically-insulating layer; and
a second electrode deposited over the second impurity-doped region of each mesa structure.
13. The apparatus of claim 12 wherein the III-V compound semiconductor substrate comprises a gallium arsenide (GaAs) substrate, or a gallium antimonide (GaSb) substrate.
14. The apparatus of claim 12 wherein the plurality of III-V compound semiconductor layers includes a lower cladding layer located beneath the type-II superlattice region, and an upper cladding layer located above the type-II superlattice region.
15. The apparatus of claim 12 wherein the first impurity-doped region and the second impurity-doped region are oppositely doped.
16. The apparatus of claim 12 wherein the type-II superlattice region comprises a not-intentionally-doped type-II superlattice.
17. The apparatus of claim 12 wherein the second electrode of each mesa structure is electrically connected to the III-V compound semiconductor substrate.