MOS TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
In a MOS transistor having a structure in which a source and a drain are raised on a substrate by using a selective epitaxial growth technique, a bulk resistance can be reduced while an impurity concentration of a silicon layer is reduced in the selective epitaxial growth. A metal oxide semiconductor transistor includes a gate having a sidewall formed on a silicon substrate, a silicon layer formed on the silicon substrate by selective epitaxial growth, and an inclination portion inclined downward in a direction opposite to the gate on at least a portion of a cross-section including the silicon layer and the gate.
1 . A metal oxide semiconductor transistor comprising:
a gate having a sidewall formed on a silicon substrate;
a silicon layer formed on the silicon substrate by selective epitaxial growth; and
an inclination portion inclined downward in a direction opposite to said gate on at least a portion of a cross-section including said silicon layer and said gate.
2 . The MOS transistor claimed in claim 1 , further comprising a conductive layer formed along said inclination portion.
3 . The MOS transistor claimed in claim 1 , wherein said silicon layer includes a recessed portion,
wherein said inclination portion is formed by a portion of said recessed portion.
4 . The MOS transistor claimed in claim 1 , further comprising a contact hole having a bottom formed by at least a portion of said inclination portion on said silicon layer.
5 . The MOS transistor claimed in claim 4 , further comprising a conductive layer formed on the bottom of said contact hole.
6 . The MOS transistor claimed in claim 2 , wherein said conductive layer comprises an impurity layer introduced by an ion implantation method.
7 . The MOS transistor claimed in claim 2 , wherein said conductive layer is formed in a self-aligned manner by metal or semiconductor and said silicon layer.
8 . The MOS transistor claimed in claim 4 , further comprising a contact formed in said contact hole, said contact comprising a silicide layer formed by introducing an impurity into said contact hole by an ion implantation method.
9 . The MOS transistor claimed in claim 4 , further comprising a contact formed in said contact hole, said contact comprising polysilicon including a doped impurity.
10 . A semiconductor device in which said MOS transistors claimed in claim 1 are connected to each other, comprising:
a recessed portion located between two of said gates of said MOS transistors, said recessed portion being formed by connecting said inclination portions of said MOS transistors to each other; and
a contact hole having a bottom formed by said recessed portion.
11 . A semiconductor device including said MOS transistor claimed in claim 1 .
12 . A method of manufacturing a metal oxide semiconductor transistor including a gate having a sidewall formed on a silicon substrate and a silicon layer formed on the silicon substrate by selective epitaxial growth, said method comprising:
forming an inclination portion inclined downward in a direction opposite to the gate on at least a portion of a cross-section including the silicon layer and the gate.
13 . The method claimed in claim 12 , further comprising forming a conductive layer along the inclination portion.
14 . The method claimed in claim 12 , wherein said forming process of the inclination portion comprises forming the inclination portion as a portion of a recessed portion formed in the silicon layer.
15 . The method claimed in claim 12 , further comprising forming a contact hole having a bottom formed by at least a portion of the inclination portion on the silicon layer.
16 . The method claimed in claim 15 , further comprising forming a conductive layer on the bottom of the contact hole.
17 . The method claimed in claim 13 , wherein the conductive layer comprises an impurity layer introduced by an ion implantation method.
18 . The method claimed in claim 13 , wherein said forming process of the conductive layer comprises forming the conductive layer in a self-aligned manner by metal or semiconductor and said silicon layer.
19 . The method claimed in claim 15 , further comprising introducing an impurity into the contact hole by an ion implantation method to form a contact of a silicide layer in the contact hole.
20 . The method claimed in claim 15 , further comprising forming a contact of polysilicon including a doped impurity in the contact hole.