Enhanced emission from pc-LEDs using IF filters
View Patent ↗White-light efficiency from a light emitting diode is enhanced by recycling inwardly penetrating light outwardly by application of a multi-layer, thin film filter between the LED die and the phosphor layer. This procedure increases the package extraction efficiency.
1. A light emitting diode comprising:
a die emitting blue light of a first frequency;
a phosphor energized by light of said first frequency to emit light of a second frequency; and
a filter interposed between said phosphor and said die, said filter having a reflectance of less than about 15% at wavelengths from about 350 nm to about 480 nm and a reflectance of greater than about 80% at wavelengths from about 510 nm to about 700 nm, said filter being comprised of alternating layers of Nb 2 O 5 and SiO 2 , wherein the Nb 2 O 5 layers vary in thickness from about 5 nm to about 100 nm and the SiO 2 layers vary in thickness from about 25 nm to about 125 nm.
2. The light emitting diode of claim 1 wherein said phosphor is a solid, monolithic YAG:Ce ceramic.
3. The light emitting diode of claim 2 wherein said filter is affixed to said ceramic monolith.
4. The light emitting diode of claim 2 wherein the concentration of Ce in the YAG:Ce ceramic is from about 0.05 at. % Ce to about 0.5 at. % Ce.
5. The light emitting diode of claim 2 wherein the YAG:Ce ceramic has a thickness of about 100 μm.
6. The light emitting diode of claim 1 wherein said phosphor is powdered and applied to a first side of a transparent substrate and said filter is applied to the opposite side of said substrate.
7. The light emitting diode of claim 1 wherein said filter is applied to said die and said phosphor is applied to said filter.
8. The light emitting diode of claim 1 wherein there are eight layers of Nb 2 O 5 and eight layers of SiO 2 .
9. The light emitting diode of claim 1 wherein said phosphor is a single crystal YAG:Ce phosphor.
10. The light emitting diode of claim 1 wherein the filer has 16 alternating layers having the following thicknesses:
Thickness
Layer
Material
(nm)
1
Nb 2 O 5
69.94
2
SiO 2
106.99
3
Nb 2 O 5
59.34
4
SiO 2
124.57
5
Nb 2 O 5
27.16
6
SiO 2
125.14
7
Nb 2 O 5
57.10
8
SiO 2
107.92
9
Nb 2 O 5
62.96
10
SiO 2
120.09
11
Nb 2 O 5
91.85
12
SiO 2
26.16
13
Nb 2 O 5
7.35
14
SiO 2
107.80
15
Nb 2 O 5
70.62
16
SiO 2
38.46
11. The light emitting diode of claim 10 wherein said filter is applied to said die am said phosphor is applied to said filter.
12. The light emitting diode of claim 11 wherein said phosphor is a solid, monolithic YAG:Ce ceramic.
13. The light emitting diode of claim 10 wherein said phosphor is a solid, monolithic YAG:Ce ceramic.