IP Library Granted Patent US 8,277,896
Granted Patent B2
US 8,277,896 · App. 11/847,446 · Granted Oct 2, 2012

Thin film dielectrics with perovskite structure and preparation thereof

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Quick Facts
Patent No.
US 8,277,896
App. No.
11/847,446
Granted
Oct 2, 2012
Kind
B2
Abstract

Methods of making a ternary oxide and a perovskite-related ternary oxide structure are described. The methods include reacting a binary oxide with a metal oxide or a metal hydroxide to form a ternary oxide dielectric layer on a substrate. Powders, anodes, pressed articles, and capacitors including the ternary oxide or perovskite-related ternary oxide structure as a dielectric layer or other layers are further described.

Claims (12)

1. A method of making a ternary oxide comprising:

reacting a binary oxide with a metal material to form a ternary oxide dielectric layer on a substrate, wherein said metal material is different than said binary oxide, wherein said metal material is a metal oxide, a metal carbonate, a metal nitrate, a metal halide, a metal hydroxide, a metal fluoride, or combinations thereof, wherein said reacting comprises:

fusing said binary oxide with said metal material to form a solid material;

dissolving said solid material in a first solution;

disposing said first solution or a derivative of said first solution onto said substrate; and

heating said substrate having said first solution disposed thereon or an evaporated film of the first solution disposed thereon under vacuum, wherein said binary oxide reacts with the metal material to produce a ternary oxide dielectric.

2. The method of claim 1 , wherein said disposing comprises coating, spraying, dipping, exposing to vapors, or combinations thereof.

3. The method of claim 1 , wherein said solid material comprises a fused material.

4. The method of claim 1 , wherein said first solution comprises water.

5. The method of claim 1 , wherein said substrate is a metal substrate.

6. The method of claim 1 , wherein said substrate is a metal substrate heated to a temperature of from about 150° C. to about 1400° C.

7. The method of claim 1 , wherein said substrate is a metal substrate heated to a temperature of from about 150° C. to about 1400° C. and for about 1 hour to about 36 hours.

Assignments (7)
RELEASE OF SECURITY INTERESTS Recorded Jul 9, 2019
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBAL ADVANCED METALS USA, INC.
Reel/Frame 049705/0929 →
SECURITY INTEREST Recorded Jul 7, 2014
From: TAL HOLDINGS, LLC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 033279/0731 →
SECURITY INTEREST Recorded May 1, 2014
From: GLOBAL ADVANCED METALS USA, INC.
To: TAL HOLDINGS, LLC.
Reel/Frame 032798/0117 →
SECURITY AGREEMENT Recorded Apr 29, 2014
From: GLOBAL ADVANCED METALS USA, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 032816/0878 →
RELEASE OF SECURITY INTEREST Recorded Apr 9, 2014
From: CABOT CORPORATION
To: GLOBAL ADVANCED METALS USA, INC.
Reel/Frame 032764/0791 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 18, 2012
From: CABOT CORPORATION
To: GLOBAL ADVANCED METALS, USA, INC.
Reel/Frame 028392/0831 →
SECURITY AGREEMENT Recorded Jun 18, 2012
From: GLOBAL ADVANCED METALS USA, INC.
To: CABOT CORPORATION
Reel/Frame 028415/0755 →