Semiconductor and method for manufacturing the same
View Patent ↗A semiconductor device and a method of fabricating same are provided. According to an embodiment, a gate insulating layer and a gate are sequentially formed on a substrate, and a pocket ion implant region is formed at sides and below a portion of the gate at a predetermined depth in the substrate. An LDD ion implant region can be formed between the pocket ion implant region and the surface of the substrate. A spacer is formed on sides of the gate, and a deep source/drain region is formed by ion-implanting BF 2 within the substrate at sides of the spacer.
1. A method for manufacturing a semiconductor device comprising:
sequentially forming a gate insulating layer and a gate on a substrate;
forming a pocket ion implant region at sides and below a portion of the gate in the substrate at a predetermined depth;
forming a lightly doped drain (LDD) ion implant region between the pocket ion implant region and the surface of the substrate after forming the pocket ion implant region;
forming a spacer on sides of the gate; and
forming a deep source/drain region by ion-implanting BF 2 and indium into the substrate using the spacer as an ion implant mask, wherein the indium is ion-implanted to a shallower depth than the BF 2 .
2. The method according to claim 1 , further comprising performing a rapid thermal process after ion-implanting BF 2 .
3. The method according to claim 1 , wherein ion-implanting the indium is performed before ion-implanting the BF 2 .
4. The method according to claim 1 , wherein the indium is ion-implanted at an implantation energy of 10 to 150 KeV and the BF 2 is ion-implanted at an implantation energy of 20 to 40 KeV.
5. The method according to claim 1 , wherein the deep source/drain region is formed to a depth of 50 to 100 nm from the surface of the substrate.
6. The method according to claim 1 , wherein ion-implanting the indium provides a preamorphization of the substrate.